DESIGN, MODELING, TESTING, AND SPICE PARAMETER EXTRACTION OF DIMOS TRANSISTOR IN 4H-SILICON CARBIDE
2006 ◽
Vol 16
(02)
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pp. 733-746
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In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide ( SiC ) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H- SiC DIMOS transistor test device. SPICE parameters are extracted from the measurements, and a SPICE model for the DIMOS transistor has been developed. The presented work is a part of team efforts of material, device, and power electronics researchers at the University of Tennessee and Oak Ridge National Laboratory.
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1963 ◽
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2019 ◽
2004 ◽
Vol 126
(1)
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pp. 676-679
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2021 ◽
Vol 2122
(1)
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pp. 011001
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