ELECTRICAL PROPERTIES OF P3HT (POLY [3-HEXYLTHIOPHENE])/n-TYPE CRYSTALLINE SILICON (n-c-Si) SOLAR CELLS

2011 ◽  
Vol 20 (04) ◽  
pp. 749-773 ◽  
Author(s):  
JAIRO C. NOLASCO ◽  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMÍN IÑIGUEZ ◽  
JOSEP PALLARÈS ◽  
MAGALI ESTRADA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Space Charge ◽  
Silicon Substrate ◽  
Dark Current ◽  
Crystalline Silicon ◽  
Space Charge Limited Current ◽  
Si Solar Cells ◽  
Current Voltage

Au / P 3 HT (poly [3-hexylthiophene])/n-type crystalline silicon ( n - c - Si ) solar cells have been fabricated. The Aluminum back contact is obtained by evaporation on silicon substrate. An 80 nm P 3 HT layer thick was spin-coated on silicon substrate followed by thermal annealing. Finally golden contacts are deposited by sputtering. The best characteristics of this flawed solar cell are: V oc =0.47 V , I sc =7.42 mA / cm 2 and an efficiency of 1.29%. The area of this device is 0.07 cm2. In order to get a deep understanding of the electrical properties of the heterojunction, capacitance-voltage and current-voltage-temperature measurements have been made. A compact electrical equivalent circuit has been used to describe the dark current-voltage characteristics. It is based on the combination of two exponential mechanisms, shunt and series resistances and space-charge limited current terms. From the temperature dependence of the extracted parameters we can obtain the limiting conduction mechanism. We found that the polymeric layer limits the current not only at low voltages, through Multi-Tunneling Capture Emission, but also at high voltages, through series resistance and Space-Charge Limited Current. On the other hand, the Silicon wafer limits the current at medium voltages, through the diffusion mechanism. In addition, the model is useful to estimate the open circuit voltage and built in voltage of the solar cell using only dark current voltage measurements.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

scholarly journals The Influence of the Base Material Parameters on Quantum and Photoconversion Efficiency of the Si Solar Cells

2016 ◽  
Vol 61 (4) ◽  
pp. 1889-1894 ◽  
Author(s):  
P. Panek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Charge Carrier ◽  
Effective Charge ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Base Material ◽  
Photoconversion Efficiency ◽  
Si Solar Cells ◽  
Charge Carrier Lifetime

Abstract The influence of a p-type Si with different resistivity, charge carrier lifetime and emitter dopant impurities concentration on the crystalline silicon solar cells parameters were analyzed and experimentally checked. The findings were determined by quasi-steady-state photoconductance, current-voltage and spectral response methods. The study was accompanied by solar device simulation using a numerical PC1D program. The highest photoconversion efficiency of 15.13 % was obtained for the moncrystalline (Cz-Si) solar cell with a base resistivity of 1.8 Ωcm and an effective charge carrier lifetime of 22.9 μs. The results clearly confirmed the importance concerning the dopant level in a Si base material in relation to open circuit voltage and short circuit current possible to obtain from the solar cell. Reduction of a base material resistivtiy leads to a lower value of an effective charge carrier lifetime and photoconversion efficiency both for Cz-Si and multicrystalline (mc-Si) solar cells. The experimental results and calculation showed, that in the case of a solar cell produced on the basis of crystalline silicon, the most important spectral range for an efficiency of a cell is covering a wavelength range of 587 ÷ 838 nm.

scholarly journals Correlation of Different Electrical Parameters of Solar Cells with Silver Front Electrodes

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 366 ◽  
Author(s):  
Małgorzata Musztyfaga-Staszuk ◽  
Damian Janicki ◽  
Piotr Panek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Strongly Correlated ◽  
Electrical Parameters ◽  
Cell Parameters ◽  
Current Voltage ◽  
Comparison Results ◽  
Tlm Method ◽  
Photovoltaic Solar Cells

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

scholarly journals Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering

2018 ◽  
Author(s):  
Lingling Zhou ◽  
Lufei Xiao ◽  
Hai Yang ◽  
Jie Liu ◽  
Xibin Yu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Metal Oxide ◽  
Band Gap ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Oxide Layers ◽  
Si Solar Cells

Band-gap alignment engineering has now been extensively studied due to its high potential application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on surface of crystalline silicon (c-Si) solar cells. The metal oxide layers can not only extend absorption spectrum to generate extra carriers but also serve to separate electron-hole pairs more efficiently. As a consequence, the photovoltaic performance of SnO2/CdO /Si double-layer solar cell (DLSC) is highly improved compared to CdO/Si and SnO2/Si single-layer solar cells(SLSCs) and SnO2/CdO/Si double-layer solar cell (DLSC). By the alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, corresponding to a light to electric power conversion efficiency (η) of 15.09% under AM1.5 illumination. These results suggest that with the use of metal oxide layers by band-gap alignment engineering, new avenues have been opened for developing high-efficiency and cost-effective c-Si solar cells.

scholarly journals Four-terminal perovskite-silicon tandem solar cells for low light applications

2021 ◽  
Vol 2103 (1) ◽  
pp. 012191
Author(s):  
A B Nikolskaia ◽  
S S Kozlov ◽  
M F Vildanova ◽  
O K Karyagina ◽  
O I Shevaleevskiy
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Perovskite Solar Cells ◽  
Tandem Solar Cell ◽  
Low Light ◽  
Tandem Solar Cells ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
High Efficient

Abstract Here novel high efficient semi-transparent perovskite solar cells (PSCs) based on ZrO2 photoelectrodes were fabricated and were used as top elements in tandem systems with crystalline silicon (c-Si) solar cells in four-terminal configuration. The comparative analysis of photovoltaic parameters measured for PSCs, c-Si solar cells and PSC/c-Si tandem solar cells demonstrated that the use of ZrO2 photoelectrodes allows to improve the PSC performance and to achieve efficiencies for PSC/c-Si tandem solar cell higher than for a standalone c-Si solar cell under varying illumination conditions.

Pseudo colorization of electroluminescence images of multi-crystalline silicon solar cells for defect inspection

2019 ◽  
Vol 33 (14n15) ◽  
pp. 1940010
Author(s):  
Keh-Moh Lin ◽  
Horng-Horng Lin ◽  
Harshad Kumar Dandage ◽  
Yi-Chun Du
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Defect Inspection ◽  
Feature Clustering ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cells ◽  
Pseudo Color ◽  
Human Inspection

Computer imaging of electroluminescence (EL) has been successfully applied to solar cell inspection in recent years, as EL image intensities reflect the efficiency levels and/or defects in sc-Si and mc-Si solar cells. In this paper, we propose a novel computational scheme for pseudo colorization of EL images to highlight defect regions in solar cells for human inspection. Specifically, given a template EL image and pseudo color labels on its defect regions, we impose the pseudo colors to other grayscale EL images, with respect to different defect types and image structures, by template feature clustering and pseudo color transferring. Our experiments show that the proposed approach indeed improves the readability of EL images and provides better visualization of solar cell defects.

scholarly journals Dielectric and Electrical Properties of Copper-Polyimide-Copper Structures

2021 ◽  
Author(s):  
Julia FEDOTOVA
Keyword(s):  
Experimental Study ◽  
Electrical Properties ◽  
Space Charge ◽  
Charge Carriers ◽  
Localized States ◽  
Space Charge Limited Current ◽  
Copper Electrodes ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Frequency Dependences

Experimental study of current-voltage (I-V) characteristics and frequency dependences of impedance in copper-Kapton-copper structures in the temperature range 240 – 300 K were carried out. Concentration and mobility of charge carriers thermally excited from traps with exponential distribution by energy in Kapton bulk and metal-Kapton interface and injected from copper electrodes into Kapton were estimated from the fitting of experimental I-V curves within the frame of the model of the space charge limited current (SCLC). Concentration and the width of energy of localized states, arising from the disorder of the Kapton structure, are additionally estimated from the I-V characteristics.

scholarly journals Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells Using Metal Oxide Layers by Band-Gap Alignment Engineering

2018 ◽  
Author(s):  
Lingling Zhou ◽  
Lufei Xiao ◽  
Hai Yang ◽  
Jie Liu ◽  
Xibin Yu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Metal Oxide ◽  
Band Gap ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Oxide Layers ◽  
Si Solar Cells

Band-gap alignment engineering has now been extensively studied due to its high potential application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on surface of crystalline silicon(c-Si) solar cells. The metal oxide layers can not only extend absorption spectrum to generate extra carriers but also serve to separate electron-hole pairs more efficiently. As a consequence, the photovoltaic performance of SnO2/CdO /Si double-layer solar cell (DLSC) is highly improved compared to CdO/Si and SnO2/Si single-layer solar cells(SLSCs) and SnO2/CdO/Si double-layer solar cell(DLSC). By the alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, corresponding to a light to electric power conversion efficiency (η) of 15.09% under AM1.5 illumination. These results suggest that with the use of metal oxide layers by band-gap alignment engineering, new avenues have been opened for developing high-efficiency and cost-effective c-Si solar cells.

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