QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

2015 ◽  
Vol 33 (15) ◽  
pp. 3163-3169 ◽  
Author(s):  
Jun Wang ◽  
Xiaomin Ren ◽  
Can Deng ◽  
Haiyang Hu ◽  
Yunrui He ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

1987 ◽  
Author(s):  
Toshiro HAYAKAWA ◽  
Masafumi KONDO ◽  
Takahiro SUYAMA ◽  
Kosei TAKAHASHI ◽  
Saburo YAMAMOTO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

scholarly journals Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

2002 ◽  
Vol 81 (14) ◽  
pp. 2523-2525 ◽  
Author(s):  
Nelson Tansu ◽  
Nicholas J. Kirsch ◽  
Luke J. Mawst
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Dilute Nitride ◽  
Low Threshold

Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Modulation Doping ◽  
Strained Layer ◽  
Low Threshold

Very low threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by MBE

2008 ◽  
Vol 44 (6) ◽  
pp. 416 ◽  
Author(s):  
H. Zhao ◽  
G. Adolfsson ◽  
S.M. Wang ◽  
M. Sadeghi ◽  
A. Larsson
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Low Threshold

scholarly journals Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

2019 ◽  
Vol 9 (1) ◽  
pp. 162
Author(s):  
Ning An ◽  
Lei Ma ◽  
Guanyu Wen ◽  
Zhipeng Liang ◽  
Haitao Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Structure Design ◽  
Blocking Layer ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Current Densities ◽  
Better Than

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

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