Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

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QUANTUM WELL LASERS AND THEIR APPLICATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156496000190 ◽

1996 ◽

Vol 07 (03) ◽

pp. 373-381

Author(s):

LIANGHUI CHEN

Keyword(s):

Quantum Well ◽

Laser Diode ◽

Mainland China ◽

Optical Fiber Communication ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Material System ◽

High Modulation ◽

Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

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Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

Canadian Journal of Physics ◽

10.1139/p96-820 ◽

1996 ◽

Vol 74 (S1) ◽

pp. 1-4 ◽

Cited By ~ 2

Author(s):

M. Dion ◽

Z. R. Wasilewski ◽

F. Chatenoud ◽

V. K. Gupta ◽

A. R. Pratt ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Single Quantum Well ◽

Graded Index ◽

Quantum Well Laser ◽

Gaas Barrier ◽

Low Threshold ◽

Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

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