OBSERVATION OF PHOTOLUMINESCENCE FROM MAGNETO-PLASMAS UNDER INTENSE FEMTOSECOND EXCITATION IN STRONG MAGNETIC FIELDS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3775-3780
Author(s):  
Y. D. JHO ◽  
X. WANG ◽  
G. D. SANDERS ◽  
D. H. REITZE ◽  
C. J. STANTON ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Landau Levels ◽  
Emission Lines ◽  
Multiple Quantum Wells ◽  
High Magnetic Fields ◽  
Multiple Quantum ◽  
Threshold Intensity ◽  
Strong Magnetic Fields ◽  
Narrow Emission

We report results on measurements of magneto-photoluminescence at 4.2 K in In x Ga 1-x As multiple quantum wells in high magnetic fields (25 Tesla) and laser intensities (25 GW/cm 2) using 150 fs pulses. Novel magneto-plasma phenomena are observed, including strikingly narrow emission lines of Landau levels above a threshold intensity and the suppression of exciton-mixing-induced anti-crossings.

Magneto-optical study of CdTe/Cd1−TxMnxTe multiple quantum wells under high magnetic fields

1994 ◽  
Vol 201 ◽  
pp. 415-418 ◽  
Author(s):  
Shinji Kuroda ◽  
Kazutoshi Kojima ◽  
Kôji Kobayashi ◽  
Yutaka Shirai ◽  
Kôki Takita ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
High Magnetic Fields ◽  
Multiple Quantum ◽  
Optical Study

scholarly journals Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
M. Zybert ◽  
M. Marchewka ◽  
E. M. Sheregii ◽  
D. G. Rickel ◽  
J. B. Betts ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Landau Levels ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Donor States ◽  
Megagauss Magnetic Fields

Secondary emission and acoustic-phonon scattering induced by strong magnetic fields in multiple quantum wells

1992 ◽  
Vol 46 (24) ◽  
pp. 16005-16011 ◽  
Author(s):  
V. F. Sapega ◽  
V. I. Belitsky ◽  
T. Ruf ◽  
H. D. Fuchs ◽  
M. Cardona ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Secondary Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strong Magnetic Fields

scholarly journals Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

2017 ◽  
Author(s):  
M. Zybert ◽  
M. Marchweka ◽  
E. M. Sheregii ◽  
Dwight Gene Rickel ◽  
Jonathan Bobby Betts ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Landau Levels ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Donor States

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Room-temperature spin–orbit magnetic fields in slightly misoriented (110) InGaAs/InAlAs multiple quantum wells

2021 ◽  
Vol 119 (3) ◽  
pp. 032405
Author(s):  
Koichi Nakanishi ◽  
Ayuki Arikawa ◽  
Yasuhito Saito ◽  
Daisuke Iizasa ◽  
Satoshi Iba ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Spin Orbit

DEVELOPMENT OF A PLASTIC DIAMOND ANVIL CELL FOR HIGH PRESSURE MAGNETO-PHOTOLUMINESCENCE IN PULSED HIGH MAGNETIC FIELDS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3843-3846 ◽  
Author(s):  
Y. H. MATSUDA ◽  
K. UCHIDA ◽  
K. ONO ◽  
ZIWU JI ◽  
S. TAKEYAMA
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Diamond Anvil Cell ◽  
High Pressures ◽  
Exchange Interactions ◽  
High Magnetic Fields ◽  
Multiple Quantum ◽  
Reinforced Plastic ◽  
Zeeman Shift ◽  
Diamond Anvil

A diamond anvil cell (DAC) made of reinforced plastic has been developed for magneto-photoluminescence experiments in pulsed high magnetic fields. Our DAC has a standard and simple structure equipped with a stainless steel gasket. We have made magneto-photoluminescence experiments of CdTe / Cd 0.8 Mn 0.2 Te multiple quantum wells up to 41 T at 4.2 K in the pressure range 0 to 2.3 GPa. We found that the effect of the eddy current heating of the gasket can be negligible small when we use the pulsed field whose duration is a few tens of milliseconds or longer. We have also found that the exciton Zeeman shift strongly depends on the pressure, which can be a manifestation of the enhancement of the sp-d and d-d exchange interactions in the Gd 0.8 Mn 0.2 Te layer by applying high pressures.

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