MAGNETIC RACE-TRACK — A NOVEL STORAGE CLASS SPINTRONIC MEMORY

2008 ◽  
Vol 22 (01n02) ◽  
pp. 117-118 ◽  
Author(s):  
STUART PARKIN

A proposal for a novel storage-class memory is described in which magnetic domains are used to store information in a "magnetic race-track".1 The magnetic race-track shift register storage memory promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability. The magnetic race track is comprised of tall columns of magnetic material arranged perpendicularly to the surface of a silicon wafer. The domains are moved up and down the race-track by nanosecond long current pulses using the phenomenon of spin momentum transfer. The domain walls in the magnetic race-track are read using magnetic tunnel junction magnetoresistive sensing devices arranged in the silicon substrate. Recent progress in developing magnetic tunnel junction devices with giant tunneling magnetoresistance exceeding 350% at room temperature will be mentioned.2 Experiments exploring the current induced motion and depinning of domain walls in magnetic nano-wires with artificial pinning sites will be discussed. The domain wall structure, whether vortex or transverse, and the magnitude of the pinning potential is shown to have surprisingly little effect on the current driven dynamics of the domain wall motion.3 By contrast the motion of DWs under nanosecond long current pulses is surprisingly sensitive to their length.4 In particular, we find that the probability of dislodging a DW, confined to a pinning site in a permalloy nanowire, oscillates with the length of the current pulse, with a period of just a few nanoseconds. Using an analytical model and micromagnetic simulations we show that this behaviour is connected to a current induced oscillatory motion of the DW. The period is determined by the DW mass and the curvature of the confining potential. When the current is turned off during phases of the DW motion when the DW has enough momentum, there is a boomerang effect that can drive the DW out of the confining potential in the opposite direction to the flow of spin angular momentum. Note from Publisher: This article contains the abstract only.

2021 ◽  
Vol 60 (2) ◽  
pp. 020904
Author(s):  
Shuping Li ◽  
Jialin Cai ◽  
Wenxing Lv ◽  
Like Zhang ◽  
Shiheng Liang ◽  
...  

2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.


2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.


2017 ◽  
Vol 111 (18) ◽  
pp. 182410 ◽  
Author(s):  
Jialin Cai ◽  
Bin Fang ◽  
Chao Wang ◽  
Zhongming Zeng

2021 ◽  
Vol 4 (6) ◽  
pp. 392-398 ◽  
Author(s):  
E. Raymenants ◽  
O. Bultynck ◽  
D. Wan ◽  
T. Devolder ◽  
K. Garello ◽  
...  

2021 ◽  
Vol 118 (11) ◽  
pp. 112401
Author(s):  
Mahshid Alamdar ◽  
Thomas Leonard ◽  
Can Cui ◽  
Bishweshwor P. Rimal ◽  
Lin Xue ◽  
...  

2021 ◽  
Vol 118 (20) ◽  
pp. 202405
Author(s):  
Samuel Liu ◽  
T. Patrick Xiao ◽  
Can Cui ◽  
Jean Anne C. Incorvia ◽  
Christopher H. Bennett ◽  
...  

2015 ◽  
Vol 48 (5) ◽  
pp. 055001 ◽  
Author(s):  
K J O’Shea ◽  
K Rode ◽  
H Kurt ◽  
D McGrouther ◽  
D A MacLaren

2015 ◽  
Vol 233-234 ◽  
pp. 55-59
Author(s):  
Marina Kirman ◽  
Artem Talantsev ◽  
Roman Morgunov

The magnetization dynamics of metal-organic crystals has been studied in low frequency AC magnetic field. Four modes of domain wall motion (Debye relaxation, creep, slide and over - barrier motion (switching)) were distinguished in [MnII(H(R/S)-pn)(H2O)] [MnIII(CN)6]⋅2H2O crystals. Debye relaxation and creep of the domain walls are sensitive to Peierls relief configuration controlled by crystal lattice chirality. Structural defects and periodical Peierls potential compete in the damping of the domain walls. Driving factor of this competition is ratio of the domain wall width to the crystal lattice parameter.


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