Peierls “Washboard” Controls Dynamics of the Domain Walls in Molecular Ferrimagnets

2015 ◽  
Vol 233-234 ◽  
pp. 55-59
Author(s):  
Marina Kirman ◽  
Artem Talantsev ◽  
Roman Morgunov
Keyword(s):  
Domain Wall ◽  
Crystal Lattice ◽  
Domain Walls ◽  
Low Frequency ◽  
Domain Wall Motion ◽  
Lattice Parameter ◽  
Structural Defects ◽  
Crystal Lattice Parameter ◽  
Wall Width ◽  
Debye Relaxation

The magnetization dynamics of metal-organic crystals has been studied in low frequency AC magnetic field. Four modes of domain wall motion (Debye relaxation, creep, slide and over - barrier motion (switching)) were distinguished in [MnII(H(R/S)-pn)(H2O)] [MnIII(CN)6]⋅2H2O crystals. Debye relaxation and creep of the domain walls are sensitive to Peierls relief configuration controlled by crystal lattice chirality. Structural defects and periodical Peierls potential compete in the damping of the domain walls. Driving factor of this competition is ratio of the domain wall width to the crystal lattice parameter.

scholarly journals The Effect of High-Intensity Electron Beam on the Crystal Structure, Phase Composition, and Properties of Al–Si Alloys with Different Silicon Content

2021 ◽  
Vol 22 (1) ◽  
pp. 129-157
Author(s):  
D. V. Zaguliaev ◽  
S. V. Konovalov ◽  
Yu. F. Ivanov ◽  
V. E. Gromov ◽  
V. V. Shlyarov ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electron Beam ◽  
Phase Composition ◽  
Crystal Lattice ◽  
High Intensity ◽  
Materials Science ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Material Surface ◽  
Modified Layer

The study deals with the element–phase composition, microstructure evolution, crystal-lattice parameter, and microdistortions as well as the size of the coherent scattering region in the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys irradiated with the high-intensity electron beam. As revealed by the methods of x-ray phase analysis, the principal phases in untreated alloys are the aluminium-based solid solution, silicon, intermetallics, and Fe2Al9Si2 phase. In addition, the Cu9Al4 phase is detected in Al–10.65Si–2.11Cu alloy. Processing alloys with the pulsed electron beam induces the transformation of lattice parameters of Al–10.65Si–2.11Cu (aluminium-based solid solution) and Al–5.39Si–1.33Cu (Al1 and Al2 phases). The reason for the crystal-lattice parameter change in the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys is suggested to be the changing concentration of alloying elements in the solid solution of these phases. As established, if a density of electron beam is of 30 and 50 J/cm2, the silicon and intermetallic compounds dissolve in the modified layer. The state-of-the-art methods of the physical materials science made possible to establish the formation of a layer with a nanocrystalline structure of the cell-type crystallization because of the material surface irradiation. The thickness of a modified layer depends on the parameters of the electron-beam treatment and reaches maximum of 90 µm at the energy density of 50 J/cm2. According to the transmission (TEM) and scanning (SEM) electron microscopy data, the silicon particles occupy the cell boundaries. Such changes in the structural and phase states of the materials response on their mechanical characteristics. To characterize the surface properties, the microhardness, wear parameter, and friction coefficient values are determined directly on the irradiated surface for all modification variants. As shown, the irradiation of the material surface with an intensive electron beam increases wear resistance and microhardness of the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys.

scholarly journals Anomalous low-frequency noise in synthetic antiferromagnets: Possible evidence of current-induced domain-wall motion

2009 ◽  
Vol 79 (13) ◽  
Author(s):  
D. Herranz ◽  
R. Guerrero ◽  
R. Villar ◽  
F. G. Aliev ◽  
A. C. Swaving ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Low Frequency ◽  
Domain Wall Motion ◽  
Frequency Noise ◽  
Low Frequency Noise

Effect of the Peierls Relief Chirality on Domain Wall Dynamics in Molecular Ferrimagnet

2012 ◽  
Vol 190 ◽  
pp. 377-380
Author(s):  
F.B. Mushenok ◽  
O.V. Koplak ◽  
R.B. Morgunov ◽  
S.L. Chernyshova
Keyword(s):  
Magnetic Properties ◽  
Domain Wall ◽  
Low Frequency ◽  
Debye Relaxation ◽  
Domain Wall Dynamics ◽  
Relaxation Modes

In this paper the contributions of switching, slide, creep and Debye relaxation modes of the domain wall dynamics to the low-frequency magnetic properties of chiral and racemic [MnII(HL-pn)(H2O)][MnIII(CN)6]2H2O molecular ferrimagnets were distinguished.

MAGNETIC RACE-TRACK — A NOVEL STORAGE CLASS SPINTRONIC MEMORY

2008 ◽  
Vol 22 (01n02) ◽  
pp. 117-118 ◽  
Author(s):  
STUART PARKIN
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Domain Walls ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Motion ◽  
Wall Structure ◽  
Micromagnetic Simulations ◽  
Confining Potential ◽  
Current Pulses ◽  
Race Track

A proposal for a novel storage-class memory is described in which magnetic domains are used to store information in a "magnetic race-track".1 The magnetic race-track shift register storage memory promises a solid state memory with storage capacities and cost rivaling that of magnetic disk drives but with much improved performance and reliability. The magnetic race track is comprised of tall columns of magnetic material arranged perpendicularly to the surface of a silicon wafer. The domains are moved up and down the race-track by nanosecond long current pulses using the phenomenon of spin momentum transfer. The domain walls in the magnetic race-track are read using magnetic tunnel junction magnetoresistive sensing devices arranged in the silicon substrate. Recent progress in developing magnetic tunnel junction devices with giant tunneling magnetoresistance exceeding 350% at room temperature will be mentioned.2 Experiments exploring the current induced motion and depinning of domain walls in magnetic nano-wires with artificial pinning sites will be discussed. The domain wall structure, whether vortex or transverse, and the magnitude of the pinning potential is shown to have surprisingly little effect on the current driven dynamics of the domain wall motion.3 By contrast the motion of DWs under nanosecond long current pulses is surprisingly sensitive to their length.4 In particular, we find that the probability of dislodging a DW, confined to a pinning site in a permalloy nanowire, oscillates with the length of the current pulse, with a period of just a few nanoseconds. Using an analytical model and micromagnetic simulations we show that this behaviour is connected to a current induced oscillatory motion of the DW. The period is determined by the DW mass and the curvature of the confining potential. When the current is turned off during phases of the DW motion when the DW has enough momentum, there is a boomerang effect that can drive the DW out of the confining potential in the opposite direction to the flow of spin angular momentum. Note from Publisher: This article contains the abstract only.

Domain Structure Reversible Reconstruction of Amorphous Ferromagnetic by Water Molecules Weak Adsorption

2009 ◽  
Vol 152-153 ◽  
pp. 428-430 ◽  
Author(s):  
V.E. Zubov ◽  
A.D. Kudakov ◽  
N.L. Levshin ◽  
N.A. Mezenkov
Keyword(s):  
Domain Wall ◽  
Domain Structure ◽  
Domain Walls ◽  
Sample Surface ◽  
Wall Structure ◽  
Water Molecules ◽  
Wall Width ◽  
Influence Of Water ◽  
Weak Adsorption ◽  
Domain Wall Structure

Influence of water molecules reversible adsorption on domain structure and domain wall structure in amorphous Fe-rich ferromagnet samples is investigated by magnetooptical method. Before investigation the samples were kept in the air. Domain structure of the samples significantly changes in wacuum: instead one 180-degree domain wall several domain walls appear which are oriented with angle 45o to the long side of the sample. This effect is completely reversible. Another new effect is found: domain wall width on the sample surface in vacuum is 35% bigger (13.5 µm) than in atmosphere of water vapor (10 µm).

scholarly journals STRUCTURE CHANGING OF SUBMICRON PZT FILMS WITH A FINE VARIATION OF THE COMPOSITION CORRESPONDING TO MORPHOTROPIC PHASE BOUNDARY

2021 ◽  
pp. 400-410
Author(s):  
Михаил Владимирович Старицын ◽  
Михаил Леонидович Федосеев ◽  
Евгений Юрьевич Каптелов ◽  
Станислав Викторович Сенкевич ◽  
Игорь Петрович Пронин
Keyword(s):  
Crystal Lattice ◽  
Phase Boundary ◽  
Morphotropic Phase Boundary ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Two Phase ◽  
Zirconate Titanate ◽  
Phase Boundary Composition

В работе обсуждаются возможности тонкого варьирования состава субмикронных сегнетоэлектрических пленок твердых растворов цирконата-титаната свинца, соответствующих области морфотропной фазовой границы. Варьирование состава осуществлялось путем изменения расстояния от мишени до подложки в диапазоне 30 - 70 мм в установке высокочастотного магнетронного распыления керамической мишени при осаждении пленок на «холодную» подложку платинированного кремния. Это позволило изменять состав осаждаемых пленок (т.е., элементное соотношение атомов Zr и Ti) в диапазоне 0 -1,5% при сохранении однофазности сформированных перовскитовых пленок в процессе отжига при 580°C. При этом пленки характеризовались элементной неоднородностью состава по толщине, достигающей нескольких процентов. Толщина тонких слоев цирконата-титаната свинца составляла 500 нм. Исследовались изменения микроструктуры и параметров кристаллической решетки. Изменения состава пленок сопровождались существенными изменениями характера сферолитовой микроструктуры и ростовой текстуры. Был обнаружен резкий скачок квазикубического параметра кристаллической решетки, причиной которого может являться фазовая трансформация сегнетоэлектрической фазы - от ромбоэдрической модификации к двухфазному состоянию, предположительно состоящему из моноклинной и тетрагональной модификаций. The paper discusses the possibility of a fine variation in the composition of submicron ferroelectric films of lead zirconate titanate solid solutions corresponding to a morphotropic phase boundary. Composition was varied by changing the distance from the target to the substrate in the range of 30 - 70 mm in an installation for radio-frequency magnetron sputtering of a ceramic target, in which films deposition occurred on a «cold» platinized silicon substrate. This made it possible to change the composition of the deposited films (i.e., the elemental ratio of Zr and Ti atoms) in the range of 0 - 1,5% while maintaining the single-phase perovskite films annealed at 580 °С. In this case, the films were characterized by elemental inhomogeneity of the composition over the thickness, reaching several percents. The thickness of thin lead zirconate titanate layers was 500 nm. Changes in the microstructure and crystal lattice parameters were studied. The change in the composition of the films was accompanied by significant changes in the nature of the spherulite microstructure and growth texture. A sharp jump in the quasi-cubic crystal lattice parameter was discovered, which may be caused by the phase transformation of the ferroelectric phase - from the rhombohedral modification to the two-phase state, presumably consisting of monoclinic and tetragonal modifications.

Change in crystal lattice parameter of silumins with different silicon content after electron beam processing

2020 ◽  
Author(s):  
D. V. Zaguliaev ◽  
Yu. F. Ivanov ◽  
A. A. Leonov ◽  
D. F. Yakupov ◽  
Yu. A. Rubannikova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystal Lattice ◽  
Silicon Content ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Electron Beam Processing
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