Effects of methane gas flow rate on the optoelectrical properties of nitrogenated carbon thin films grown by surface wave microwave plasma chemical vapor deposition

2006 ◽  
Vol 15 (2-3) ◽  
pp. 371-377 ◽  
Author(s):  
M. Rusop ◽  
S. Adhikari ◽  
A.M.M. Omer ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2006 ◽  
Vol 13 (05) ◽  
pp. 585-592
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
T. SOGA ◽  
...  
Keyword(s):  
Surface Wave ◽  
Electrical Properties ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

We have studied the influence of the methane gas ( CH 4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon ( a - C : N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray photoelectron spectroscopy, UV-visible spectroscopy, four-point probe and two-probe method resistance measurement. The photoelectrical properties of a - C : N films were also studied. We have succeeded to grow a - C : N films using a novel method of SWMP-CVD at room temperature and found that the deposition rate, bonding and optical and electrical properties of a - C : N films are strongly dependent on the CH 4 gas sources, and the a - C : N films grown at higher CH 4 gas flow rate have relatively high electrical conductivity for both cases of in dark and under illumination condition.

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition of graphitic carbon thin films

Carbon ◽  
2010 ◽  
Vol 48 (5) ◽  
pp. 1552-1557 ◽  
Author(s):  
Marek Marcinek ◽  
Laurence J. Hardwick ◽  
Grażyna Z. Żukowska ◽  
Robert Kostecki
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Graphitic Carbon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Carbon Thin Films

THE INFLUENCE OF METHANE GAS PRESSURE ON THE OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES OF NITROGENATED AMORPHOUS CARBON FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 11 (06) ◽  
pp. 553-558 ◽  
Author(s):  
M. RUSOP ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
S. ADHIKARY ◽  
H. MOKUTANI ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Structural Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

The influence of methane gas ( CH 4) pressure on the optical, electrical and structural properties of the nitrogenated amorphous carbon nitride ( a - C : N ) films grown by microwave surface wave plasma chemical vapor deposition (SWP-CVD) on quartz and silicon (100) substrates have been studied. The a - C : N films are deposited with varying CH 4 gas ranging from 5 to 20 ml/min. To incorporate nitrogen in the film, we have introduced nitrogen gas ( N ) at 5 ml/min in the chamber. The effects of CH 4 gas pressure on the surface morphology, composition, structure, and electrical properties of the N -incorporated camphoric carbon thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES), UV-visible spectroscopy and four-probe resistance measurement. We have succeed in growing a - C : N thin films using SWP-CVD at room temperature and found that the amorphous structure of a - C films can be changed and is strongly dependent on the CH 4 gas source.

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