Ground State Geometries and Vibrational Spectra of Small Hydrogenated Silicon Clusters using Nonorthogonal Tight-Binding Molecular Dynamics

1998 ◽  
Vol 12 (15) ◽  
pp. 1607-1622 ◽  
Author(s):  
Girish R. Gupte ◽  
R. Prasad

We report a systematic study of ground state structures, vibrational spectra cohesive energies and HOMO-LUMO gaps of small Si n H m clusters (n=1, 2 and m=1–6) and their deuterated derivatives based on the nonorthogonal tight-binding molecular dynamics scheme. The ground state structures have been obtained by using simulated annealing. The bond lengths, bond angles and the frequencies of normal modes are found to be in good agreement with available experimental data and ab initio calculations. Our calculation of cohesive energies indicate SiH 2 to be more stable than SiH 3 or SiH and Si 2 H 4, more stable than Si 2 H 3 or Si 2 H 5.

1998 ◽  
Vol 12 (16n17) ◽  
pp. 1737-1750 ◽  
Author(s):  
Girish R. Gupte ◽  
R. Prasad

We report a systematic study of ground state structures, vibrational spectra, cohesive energies and HOMO-LUMO gaps of small Si n H clusters (n=3, 10) based on the nonorthogonal tight-binding molecular dynamics scheme. The ground state structures have been obtained by using simulated annealing. In particular, we focus on how the addition of a hydrogen atom affects the ground state geometry and the stability of a Si n cluster. We find that hydrogen either enters into the surface of the cluster or occupies a position outside the cluster. In the first case, it drastically distorts the cluster, while in the latter, there is very little distortion. We find that in some cases Si n H cluster has some resemblance with Si n+1 cluster. We also find that hydrogen can form bonds with more than one silicon atom. Our calculation indicates that SiH, Si3H and Si5H will be more stable and Si4H , Si6H , Si7H , Si9H and Si10H will be less stable clusters.


1995 ◽  
Vol 09 (13) ◽  
pp. 811-816 ◽  
Author(s):  
ATUL BAHEL ◽  
JUN PAN ◽  
MUSHTI V. RAMAKRISHNA

Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11–17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface.


2005 ◽  
Vol 19 (15n17) ◽  
pp. 2380-2385 ◽  
Author(s):  
BAOLIN WANG ◽  
DALING SHI ◽  
XIAOSHUANG CHEN ◽  
GUANGHOU WANG ◽  
JIJUN ZHAO

By using Gaussian98 package at BPW91 6-31g(d,p) level combined a genetic algorithm (GA) simulation, we have studied the lowest energy structural and electronic properties of the Al n N ( n =2-13) clusters. The ground-state structures, the charge transfers from Al to N site, HOMO-LUMO gap and the covalent, ionic and metallic nature with cluster size and atomic structure are investigated. Al 7 N , Al 9 N and Al 12 N cluster is found particularly stable among the Al n N clusters.


1996 ◽  
Vol 10 (17) ◽  
pp. 831-838
Author(s):  
ZHILIANG CAO ◽  
XUEPING YU ◽  
JIBING XIANG ◽  
PEIZHU DING ◽  
RUSHAN HAN

The geometric structures of C 60, C 116 and C 120 in their ground states are obtained by tight-binding dynamic molecular simulation (TBMD). We find that the ground state of C 60 has high symmetry, Ih, but C 116 and C 120 have low symmetry, D2h. The energy bands and vibrational modes of C 116 and C 120 are complex compared with C 60. Some of them can be easily recognized as C 60 derived and are no longer degenerate but very close, and others are produced by the interaction and relative movement between two C 58 or two C 60.


1996 ◽  
Vol 03 (01) ◽  
pp. 341-345 ◽  
Author(s):  
JUN PAN ◽  
ATUL BAHEL ◽  
MUSHTI V. RAMAKRISHNA

We determined the structures of silicon clusters in the 11–14-atom size range using the tight-binding molecular dynamics method. These calculations reveal that Si11 is an icosahedron with one missing cap, Si12 is a complete icosahedron, Si13 is a surface-capped icosahedron, and Si14 is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface.


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