UV EMISSION OF TETRAGONAL ZrO2 NANOCRYSTALS EMBEDDED IN ZrSiO4 AMORPHOUS MATRIX

Amorphous films Zr 0.8 Si 0.2 O 2 were deposited on quartz substrates at room temperature, by using pulsed laser deposition technique. After annealing at high temperature, Zr 0.8 Si 0.2 O 2 films suffer a phase separation to precipitate tetragonal ZrO 2 nanocrystals in ZrSiO 4 amorphous matrix. Their crystal structure, microstructure, optical absorbance and photoluminescence have been systematically investigated. Tetragonal ZrO 2 nanocrystals show intense UV emission around 392 nm under photonic excitation with a wavelength of 250 nm. The corresponding models of electronic excitation and transition related to UV emission also have been proposed.

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DEPENDENCE OF SECOND HARMONIC GENERATION ON SIZE OF NANOCRYSTALLITES OF ZnO

Modern Physics Letters B ◽

10.1142/s0217984901001938 ◽

2001 ◽

Vol 15 (15) ◽

pp. 515-521 ◽

Cited By ~ 9

Author(s):

ANIRBAN MITRA ◽

RAJ K. THAREJA

Keyword(s):

Grain Size ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Room Temperature ◽

Second Harmonic ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Deposition Technique ◽

Ambient Oxygen

We report second harmonic generation (SHG) from ZnO thin films deposited by the pulsed laser deposition technique at ambient oxygen pressures ranging from 10 mTorr to 1 Torr on glass substrate at room temperature (RT). The dependence of SHG on grain size and thickness of the film is discussed.

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Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-472-373 ◽

1997 ◽

Vol 472 ◽

Cited By ~ 4

Author(s):

M.A. El Khakani ◽

M. Chaker

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Room Temperature ◽

Optical Transmission ◽

Ambient Pressure ◽

Pulsed Laser ◽

Laser Deposition ◽

Structure Morphology ◽

Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

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Pulsed Laser Deposition of Poly(Tetrafluoroethylene) Films

MRS Proceedings ◽

10.1557/proc-397-223 ◽

1995 ◽

Vol 397 ◽

Cited By ~ 1

Author(s):

D.L. Kjendal ◽

Ashok Kumar ◽

R.B. Inturi ◽

J. A. Barnard

Keyword(s):

Pulsed Laser Deposition ◽

Room Temperature ◽

High Vacuum ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Nano Indentation ◽

Corning Glass ◽

Deposition Parameters ◽

Compositional Properties

ABSTRACTThin films of poly(tetrafluoroethylene) have been deposited on amorphous (7059 Corning Glass) and silicon(l00) substrates at various temperatures by the Pulsed Laser Deposition technique. The deposition was carried out at high vacuum (˜10-6 torr)at temperatures ranging from room temperature to 350°C. The mechanical properties of these films at the varying process temperatures have been evaluated by nano-indentation techniques and compositional properties of the films have been characterized by Fourier Transform Infrared spectroscopy. The deposition parameters have been optimized in order to produce good quality films.

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