Transverse conductivity and the pseudogap in YBCO single crystals irradiated with fast electrons

2019 ◽  
Vol 33 (20) ◽  
pp. 1950233
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
Yu. V. Litvinov ◽  
V. V. Sklyar ◽  
O. V. Dobrovolskiy
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Irradiation Dose ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Fast Electrons ◽  
Variable Range ◽  
Before And After ◽  
Temperature Dependences ◽  
Transverse Conductivity

Temperature dependences of the electrical resistance along the c-axis of [Formula: see text] single crystals are investigated before and after irradiation with electrons at 0.5–2.5 MeV energies. The irradiation was done at [Formula: see text] K and the irradiation dose was varied from [Formula: see text] to [Formula: see text]. An enhancement of the charge carriers localization with increase of the irradiation dose has been revealed. A crossover from the pseudogap (PG) regime to the variable-range hopping conductivity has been observed.

Magnetic field and temperature dependences of the electrical resistance of onion structure carbon

2010 ◽  
Vol 3 (2) ◽  
pp. 95-98
Author(s):  
Evgeny N. Tkachev ◽  
Anatoliy I. Romanenko ◽  
Olga B. Anikeeva ◽  
Timofey I. Buryakov ◽  
Kamil R. Zhdanov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Physical Properties ◽  
Fermi Level ◽  
Density Of States ◽  
Electrical Resistance ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Localization Radius ◽  
Temperature Dependences

In this paper electro physical properties of samples of onion-like carbon have been investigated. Samples have been synthesized by method of thermal graphitization of nanodiamonds. 1D Mott variable-range hopping conductivity has been observed for temperature dependences of resistance of nanoonions volume samples at temperature range 4.2 K – 300 K. Also second-degree increase of positive magnetoresistance up to 6 tesla has been revealed. Some coefficients such as localization radius a, density of states on Fermi level N(EF) have been estimated.

LOCALIZATION EFFECT AND PSEUDOGAP IN PRASEODYMIUM DOPED Y1-zPrzBa2Cu3O7-δ SINGLE CRYSTALS

2012 ◽  
Vol 26 (25) ◽  
pp. 1250163 ◽  
Author(s):  
R. V. VOVK ◽  
Z. F. NAZYROV ◽  
I. L. GOULATIS ◽  
A. CHRONEOS
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Localization Effect ◽  
Transverse Conductivity

In this paper, we investigate the temperature dependence of the transverse conductivity in Y 1-z Pr z Ba 2 Cu 3 O 7-δ single crystals with different praseodymium concentrations. It is determined that the increase of the praseodymium concentration in Y 1-z Pr z Ba 2 Cu 3 O 7-δ leads to the enhancement of localization effects. This in turn results to the transition from the pseudo-gap regime to the variable-range-hopping regime.

Transverse resistance in HoBa2Cu3O7−δ single crystals

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550232
Author(s):  
Ruslan V. Vovk ◽  
Georgij Ya. Khadzhai ◽  
Oleksandr V. Dobrovolskiy ◽  
Zarif F. Nazyrov ◽  
Alexander Chroneos
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Residual Resistivity ◽  
Variable Range Hopping ◽  
Fluctuation Conductivity ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Temperature Range ◽  
Transverse Resistance ◽  
Semiconductor Character

The transverse electrical resistance of HoBa2Cu3O[Formula: see text] single crystals is investigated in the temperature range [Formula: see text] for optimally-doped [Formula: see text] and oxygen-poor [Formula: see text] samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near [Formula: see text], of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near [Formula: see text] transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types.

Variable Range Hopping Resistivity in La2-xSrxCuO4 Nanoparticles Evaluated by Four Point Probe Method

2020 ◽  
Vol 860 ◽  
pp. 142-147
Author(s):  
Suci Winarsih ◽  
Faisal Budiman ◽  
Hirofumi Tanaka ◽  
Tadashi Adachi ◽  
Takayuki Goto ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Resistivity Measurement ◽  
Probe Method ◽  
Charge Carriers ◽  
High Resistivity ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Hopping Model ◽  
Variable Range Hopping Model

We report the results of the resistivity measurement on La2-xSrxCuO4 nanoparticles with x = 0, 0.05, and 0.20 evaluated by the four-point probe method. The high resistivity value shows the predominance of the inter-grain part. The temperature dependence of the conductivity can be analyzed by variable range hopping model showing the charge carriers are formed by thermal activation. There is no superconducting behavior that could be observed in La2-xSrxCuO4 nanoparticles with x = 0.05 and 0.20.

Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals

2014 ◽  
Vol 127 ◽  
pp. 87-91 ◽  
Author(s):  
M. Guc ◽  
K.G. Lisunov ◽  
E. Hajdeu ◽  
S. Levcenko ◽  
V. Ursaki ◽  
...  
Keyword(s):  
Single Crystals ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

scholarly journals Features of Radiation-Defect Annealing in n-Ge Single Crystals Irradiated with High-Energy Electrons

2019 ◽  
Vol 64 (2) ◽  
pp. 151
Author(s):  
S. V. Luniov ◽  
A. I. Zimych ◽  
M. V. Khvyshchun ◽  
V. T. Maslyuk ◽  
I. G. Megela
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Measured Temperature ◽  
Hall Constant ◽  
Defect Annealing ◽  
Before And After ◽  
Temperature Dependences ◽  
Radiation Induced ◽  
Disordered Crystal ◽  
Induced Defects

The isothermal annealing of n-Ge single crystals irradiated with 10-MeV electrons to the fluence Φ = 5 × 1015 cm−2 has been studied. On the basis of the measured temperature dependences of the Hall constant and by solving the electroneutrality equations, the concentrations of radiation-induced defects (A-centers) in irradiated n-Ge single crystals are calculated both before and after the annealing. An anomalous increase of the Hall constant is found, when the irradiated n-Ge single crystals were annealed at Tan = 403 K for up to 3 h. The annealing at the temperature Tan = 393 K for 1 h gave rise to the np conversion in the researched crystals. The revealed effects can be explained by the concentration growth of A-centers owing to the generation of vacancies at the annealing of disordered crystal regions.

Magnetotransport of Cu2ZnSnS4 single crystals in two regimes of variable–range hopping conduction

2017 ◽  
Vol 53 (2) ◽  
pp. 186-195 ◽  
Author(s):  
M. Guc ◽  
E. Lähderanta ◽  
M. A. Shakhov ◽  
E. Hajdeu-Chicarosh ◽  
E. Arushanov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Variable Range Hopping Conduction

scholarly journals Тип оптических переходов на краю фундаментального поглощения кристаллов TlGaSe-=SUB=-2-=/SUB=- и TInS-=SUB=-2-=/SUB=-, подвергнутых γ-облучению

2019 ◽  
Vol 127 (9) ◽  
pp. 420
Author(s):  
Р.М. Сардарлы ◽  
Ф.Т. Салманов ◽  
Н.А. Алиева
Keyword(s):  
Optical Properties ◽  
Radiation Dose ◽  
Optical Absorption ◽  
Gamma Irradiation ◽  
Single Crystals ◽  
Irradiation Dose ◽  
Optical Transitions ◽  
Optical Absorption Spectra ◽  
Interband Transitions ◽  
Before And After

The effect of gamma irradiation on the optical properties of layered TlGaSe2 and TlInS2 crystals in the wavelength range of 400–1,100 nm at 300 K is studied. From the analysis of optical absorption spectra, the energies of direct and indirect optical interband transitions before and after gamma irradiation are determined. It is shown that as the gamma-irradiation dose is accumulated in the range of 0–25 Mrad by TlGaSe2 and TlInS2 single crystals, the energies of direct and indirect allowed optical transitions increase from Egd = 2.06 eV and Egi = 1.90 eV at D = 0 Mrad to Egd = 2.11 eV and Egi = 1.98 eV at D = 25 Mrad for TlGaSe2 and Egd = 2.32 eV crystals and Egi = 2.27 eV at D = 0 Mrad to Egd = 2.35 and Egi = 2.32 eV at D = 25 Mrad for TlInS2 crystals. A decrease in the transmittance at doses from 0 to 5 Mrad and a further increase in the transmittance at the radiation dose D = 25 Mrad are observed.

Sign in / Sign up

Export Citation Format

Share Document