HETEROJUNCTION BAND DISCONTINUITY CHANGE BY ULTRATHIN INTRALAYER: Na

1993 ◽  
Vol 07 (07) ◽  
pp. 459-464 ◽  
Author(s):  
SHIHONG XU ◽  
XIANMING LIU ◽  
MAOSHENG MA ◽  
JINGSHENG ZHU ◽  
YUHENG ZHANG ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Discontinuity

The changes of band offset of Ge-GaAs(100) heterojunction are observed by means of an ultrathin Na intralayer with the photoemission spectroscopy. 1 ML Na intralayer increases the valence-band discontinuity of Ge-GaAs by 0.19 eV on the average.

The growth of ZnO on buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  
Keyword(s):  
Valence Band ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy

1995 ◽  
Vol 24 (4) ◽  
pp. 225-227 ◽  
Author(s):  
G. Martin ◽  
S. Strite ◽  
A. Botchkarev ◽  
A. Agarwal ◽  
A. Rockett ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Valence Band Discontinuity

Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy

1994 ◽  
Vol 65 (5) ◽  
pp. 610-612 ◽  
Author(s):  
G. Martin ◽  
S. Strite ◽  
A. Botchkarev ◽  
A. Agarwal ◽  
A. Rockett ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Valence Band Discontinuity

Measurement of Valence Band Offset in Strained GexSi1−x/Si Heterojunctions

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Khorram ◽  
C. H. Chern ◽  
K. L. Wang
Keyword(s):  
Valence Band ◽  
Theoretical Calculations ◽  
Thick Layer ◽  
Electrical Measurement ◽  
Band Offset ◽  
Electrical Measurements ◽  
Temperature Growth ◽  
Heterostruc Ture ◽  
Valence Band Discontinuity ◽  
Good Agreement

ABSTRACTThe valence band discontinuity ΔEV in the coherently strained GexSi1−x/Si heterostruc-ture is determined using I-V-T measurement. The electrical measurements of the band discontinuity of the pseudomorphic layers are difficult due to the thin layer imposed by the strain. Recently, low temperature growth of thick layer (>100 nm) of coherently strained GexSi1−x on Si has been achieved and thus made it possible for an accurate electrical measurement of band offset. The results obtained are in good agreement with the theoretical calculations by pseudopotential method.

Band structure and valence-band offset of HfO2 thin film on Si substrate from photoemission spectroscopy

2009 ◽  
Vol 97 (2) ◽  
pp. 475-479 ◽  
Author(s):  
Tingting Tan ◽  
Zhengtang Liu ◽  
Hongcheng Lu ◽  
Wenting Liu ◽  
Feng Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Si Substrate ◽  
Valence Band Offset

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

2008 ◽  
Vol 78 (3) ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
C. E. Kendrick ◽  
L. R. Bailey ◽  
S. M. Durbin ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

scholarly journals Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

2008 ◽  
Vol 93 (20) ◽  
pp. 202108 ◽  
Author(s):  
T. D. Veal ◽  
P. D. C. King ◽  
S. A. Hatfield ◽  
L. R. Bailey ◽  
C. F. McConville ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

Valence band offset determination of CdSeTe and CdMgTe alloys with CdTe using X-ray photoemission spectroscopy

2020 ◽  
Vol 529 ◽  
pp. 147126 ◽  
Author(s):  
E.G. LeBlanc ◽  
D. Leinen ◽  
M. Edirisooriya ◽  
A. Los ◽  
T.H. Myers
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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