THERMAL RELAXATION TIMES OF BISTABLE THIN FILM ELEMENTS

1993 ◽  
Vol 02 (02) ◽  
pp. 209-220 ◽  
Author(s):  
V. GLAW ◽  
K. JANIAK ◽  
A. KUMMROW ◽  
V. PENSCHKE ◽  
H.J. EICHLER
Keyword(s):  
Thin Film ◽  
Heat Capacity ◽  
Relaxation Time ◽  
Optical Bistability ◽  
Relaxation Times ◽  
Thermal Relaxation ◽  
Interference Filters ◽  
Spot Radius ◽  
Thermal Relaxation Times ◽  
Thin Film Interference

The heat flow in evaporated thin film interference filters with CdS spacer and an optional CdSe absorption layer is investigated, analyzing the dynamics of optical bistability. The influence of the spot radius r of the exciting laser beam on the switching parameters is studied experimentally and theoretically. The response to pulsed excitation of the bistable devices can be described with a relaxation time τ~r and an effective nonlinearity χ~r−2 which is inversely proportional to the heat capacity of the bistable element.

The Effect of Relaxation Times on Thermoelastic Damping in a Nanobeam Resonator

2016 ◽  
Vol 04 (02) ◽  
pp. 1650001 ◽  
Author(s):  
Ibrahim A. Abbas
Keyword(s):  
Relaxation Time ◽  
Present Model ◽  
Relaxation Times ◽  
Thermal Relaxation ◽  
Beam Deflection ◽  
Thermoelastic Damping ◽  
Coupled Thermoelasticity ◽  
Special Cases ◽  
Thermal Relaxation Times ◽  
Gl Theory

In the present work, in accordance with the generalized theory of thermoelasticity with two thermal relaxation times, the vibration of a thick finite nanobeam resonator has been considered. Both the general thermoelasticity and coupled thermoelasticity (CT) theories with only one relaxation time can be deduced from the present model as special cases. Under clamped conditions for beam, the effect of relaxation times in nanobeam resonator has been investigated. Based on the analytical relationships, the beam deflection, temperature change, frequency shift and thermoelastic damping were investigated and the numerical results were graphically obtained. According to the observed results there is a clear difference between the CT theory, Lord and Shulman’s (LS) theory and Green and Lindsay’s (GL) theory.

scholarly journals Thermal relaxation of a two-dimensional plasma in a d.c. magnetic field. Part 2. Numerical simulation

1974 ◽  
Vol 12 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Jang-Yu Hsu ◽  
Glenn Joyce ◽  
David Montgomery
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Linear Dimension ◽  
Plasma Frequency ◽  
Relaxation Times ◽  
Thermal Relaxation ◽  
Two Dimensional ◽  
Thermal Relaxation Times ◽  
Two Parameters ◽  
Number Of Particles

The thermal relaxation process for a spatially uniform two-dimensional plasma in a uniform d.c. magnetic field is simulated numerically. Thermal relaxation times are defined in terms of the time necessary for the numerically computed Boltzmann H function to decrease through a given part of the distance to its minimum value. Dependence of relaxation time on two parameters is studied: number of particles per Debye square n0 λ2D and ratio of gyrofrequency to plasma frequency Ω/ωp. When Ω2/ω2p becomes ≫[ln (L/2πλD)]−½, where L is the linear dimension of the system, it is found that the relaxation time varies to a good approximation as (n0 λ2D)½ and Ω/ωp.

New approach to obtain uniform thickness ZnS thin film interference filters

1991 ◽  
Author(s):  
Yuan S. Mei ◽  
Shi-Xuan Shang ◽  
Jin A. Shan ◽  
Jian G. Sun
Keyword(s):  
Thin Film ◽  
Uniform Thickness ◽  
New Approach ◽  
Interference Filters ◽  
Thin Film Interference

Analysis of Deep Levels in GaAs Detector Diodes Using Impedance Spectroscopy

1993 ◽  
Vol 302 ◽  
Author(s):  
C Eiche ◽  
M Fiederle ◽  
J Weese ◽  
D Maier ◽  
D Ebling ◽  
...  
Keyword(s):  
Cross Section ◽  
Regularization Method ◽  
Capture Cross Section ◽  
Relaxation Times ◽  
Thermal Relaxation ◽  
Simulated Data ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Thermal Relaxation Times ◽  
Level 2

ABSTRACTImpedance or admittance spectroscopy has been shown to be a very convenient tool for the investigation of deep levels in semiconductor junctions. At constant temperature a frequency sweep is performed. After that the impedance signal is analysed by a regularization method based on Tikhonov regularization in order to obtain the thermal relaxation times of the deep levels present in the junction. The high resolution of the regularization method in comparison to conventional techniques is demonstrated using simulated data. The temperature dependence of the thermal relaxation times provides information about the properties of the deep levels such as activation energy or capture cross section. Two donor levels with activation energies dE1 =0.58 eV and dE2 =0.68 eV are observed in our detector diodes. It can be shown that the concentration of level 2 is increased after irradiation.

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