COMPLEX BEHAVIORS AT SIMPLE SEMICONDUCTOR AND METAL/SEMICONDUCTOR SURFACES

2003 ◽  
Vol 10 (06) ◽  
pp. 981-1008 ◽  
Author(s):  
MARÍA E. DÁVILA ◽  
JOSÉ AVILA ◽  
MARÍA CARMEN ASENSIO ◽  
GUY LE LAY

We present in this article a comprehensive review of the dynamical fluctuations in the atomic positions that may take place, even at very low temperatures, at the clean silicon or germanium (100) surfaces or at their (111) surfaces decorated with Sn or Ag adatoms. We also elucidate the intriguing, hitherto unexplained differences observed between the two, seemingly similar, Sn/Si(111) and Sn/Ge(111) [Formula: see text] surfaces. We also describe the surprising behaviors of silver ultrathin films grown on different semiconductor surfaces, displaying in certain cases a bcc phase, a one-dimensional quasicrystalline superstructure and/or well-defined quantum size effects.

2016 ◽  
Vol 17 (1) ◽  
pp. 7-10
Author(s):  
M.A. Ruvinskii ◽  
O.B. Kostyuk ◽  
B.M. Ruvinskii

It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.


1996 ◽  
Vol 79 (6) ◽  
pp. 3082-3088 ◽  
Author(s):  
H. Hong ◽  
M. Tarabia ◽  
H. Chayet ◽  
D. Davidov ◽  
E. Z. Faraggi ◽  
...  

2007 ◽  
Vol 21 (25) ◽  
pp. 1723-1732
Author(s):  
R. VILLAGÓMEZ

Oscillations in the infrared reflectance from metallic ultrathin films are described as consequence of quantum size effects. In this contribution, we present experimental evidence of such oscillations for Nb ultrathin films deposited on α-type SiO 2 substrates. Also, it is shown how substrates influence the size effects and the amplitude but not the period of oscillations. Because of the strong influence from the chosen substrate due to absorption, IR reflectivity was fitted to the optical response of our metal-substrate and bare-substrate system by using the three-oscillator model and numerical calculations on the basis of the local field calculation for a single metallic quantum well. Although quantum size effects are well studied in semiconductor compounds, there are few studies of this effect in metallic films where the present investigation has its most important contribution. Measurements for p-polarized reflectance (Rp) are made using a tunable p-polarized CO 2 waveguide laser using wavelengths from the p-branch (9.4 to 9.7 μm) and R-branch (10.0 to 10.4 μm). Nb/SiO 2 ultrathin films were assembled by a conventional RF sputtering technique and tailored thicknesses were deposited from 5.5 to 55 Å.


1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii

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