scholarly journals Quantum size effects in a one-dimensional semimetal

2006 ◽  
Vol 74 (20) ◽  
Author(s):  
Shadyar Farhangfar
2016 ◽  
Vol 17 (1) ◽  
pp. 7-10
Author(s):  
M.A. Ruvinskii ◽  
O.B. Kostyuk ◽  
B.M. Ruvinskii

It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.


2003 ◽  
Vol 10 (06) ◽  
pp. 981-1008 ◽  
Author(s):  
MARÍA E. DÁVILA ◽  
JOSÉ AVILA ◽  
MARÍA CARMEN ASENSIO ◽  
GUY LE LAY

We present in this article a comprehensive review of the dynamical fluctuations in the atomic positions that may take place, even at very low temperatures, at the clean silicon or germanium (100) surfaces or at their (111) surfaces decorated with Sn or Ag adatoms. We also elucidate the intriguing, hitherto unexplained differences observed between the two, seemingly similar, Sn/Si(111) and Sn/Ge(111) [Formula: see text] surfaces. We also describe the surprising behaviors of silver ultrathin films grown on different semiconductor surfaces, displaying in certain cases a bcc phase, a one-dimensional quasicrystalline superstructure and/or well-defined quantum size effects.


1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.


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