scholarly journals THE DARK SIDE OF GOSSIPS: HINTS FROM A SIMPLE OPINION DYNAMICS MODEL

2018 ◽  
Vol 21 (06n07) ◽  
pp. 1850021 ◽  
Author(s):  
GUILLAUME DEFFUANT ◽  
ILARIA BERTAZZI ◽  
SYLVIE HUET
Keyword(s):  
Simple Model ◽  
Opinion Dynamics ◽  
Relative Influence ◽  
Dark Side ◽  
Negative Bias ◽  
Positive Bias ◽  
Dynamics Model ◽  
Random Pair ◽  
Pair Interactions

We consider a simple model of agents modifying their opinion about themselves and about the others during random pair interactions. Two unexpected patterns emerge: (1) without gossips, starting from zero, agents’ opinions tend to grow and stabilize on average at a positive value; (2) when introducing gossips, this pattern is inverted; the opinions tend to decrease and stabilize on average at a negative value. We show that these patterns can be explained by the relative influence of a positive bias on self-opinions and of a negative bias on opinions about others. Without gossips, the positive bias on self-opinions dominates, leading to a positive average opinion. Gossips increase the negative bias about others, which can dominate the positive bias on self-opinions, leading to a negative average opinion.

Multi-state voter model on weighted social networks with committed agents

2014 ◽  
Vol 25 (07) ◽  
pp. 1450022 ◽  
Author(s):  
Saijun Chen ◽  
Haibo Hu ◽  
Jun Chen ◽  
Zhigao Chen
Keyword(s):  
Social Networks ◽  
Numerical Simulations ◽  
Opinion Dynamics ◽  
The Other ◽  
Voter Model ◽  
Scaling Exponent ◽  
Dynamics Model ◽  
Topological Structures ◽  
A Value ◽  
Dynamics Models

There exist scaling correlations between the edge weights and the nodes' degrees in weighted social networks. Based on the empirical findings, we study a multi-state voter model on weighted social networks where the weight is given by the product of agents' degrees raised to a power θ and there exist persistent individuals whose opinions are independent of those of their friends. We find that the fraction of each opinion will converge to a value which only relates to the degrees of initial committed agents and the scaling exponent θ. The analytical predictions are verified by numerical simulations. The model indicates that agents' degrees and scaling exponent can significantly influence the final coexistence or consensus state of opinions. We also study the influence of degree mixing characteristics on the dynamics model by numerical simulations and discuss the relation between the model and the other related opinion dynamics models on social networks with different topological structures and initial configurations.

scholarly journals Analysis of a nonlinear opinion dynamics model with biased assimilation

Automatica ◽  
2020 ◽  
Vol 120 ◽  
pp. 109113
Author(s):  
Weiguo Xia ◽  
Mengbin Ye ◽  
Ji Liu ◽  
Ming Cao ◽  
Xi-Ming Sun
Keyword(s):  
Opinion Dynamics ◽  
Dynamics Model ◽  
Biased Assimilation

COMPARATIVE INSTABILITIES ANALYSIS FOR a-Si:H BODY-TIED TFT (BT-TFT) AND FLOATING BODY TFT (FB-TFT) UNDER BIAS TEMPERATURE STRESSING (BTS)

2008 ◽  
Vol 22 (05) ◽  
pp. 337-341
Author(s):  
YONG K. LEE ◽  
SUNG-HOON CHOA
Keyword(s):  
Silicon Nitride ◽  
Threshold Voltage ◽  
Gate Insulator ◽  
Floating Body ◽  
Negative Bias ◽  
Positive Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Hole Trapping

The a- Si:H thin film transistors TFT with silicon nitride as a gate insulator have been stressed with negative and positive bias to realize the instability mechanisms. With proposed BT-TFT and FB-TFT devices, it is found that the threshold voltages of both BT-TFT and BT-TFT devices are positively shifted under positive bias stress and then negatively shifted for negative bias stress. The positive threshold voltage shift is due to the electron trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The negative threshold voltage shift is mainly due to hole trapping and/or electron de-trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The positive or negative threshold voltage shift keeps increasing with increasing positive or negative gate bias for both BT-TFT and FB-TFT devices. However, as far as the threshold voltage shift slope is concerned, under positive bias stress, both BT-TFT and FB-TFT devices are similar to each other. On the other hand, under negative bias stress, BT-TFT shift amount is much less than one for the FB-TFT device.

A stochastic opinion dynamics model with multiple contents

2013 ◽  
Author(s):  
Julio Cesar Louzada Pinto ◽  
Tijani Chahed ◽  
Jeremie Jakubowicz
Keyword(s):  
Opinion Dynamics ◽  
Dynamics Model

A Modified Architecture for Radix-4 Booth Multiplier with Adaptive Hold Logic

2016 ◽  
Vol 4 (1) ◽  
pp. 01-05
Author(s):  
S Suvarna ◽  
K Rajesh ◽  
T Radhu
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Negative Bias ◽  
Positive Bias ◽  
Negative Bias Temperature Instability ◽  
Discrete Cosine Transforms ◽  
Temperature Instability ◽  
Booth Multiplier ◽  
Bias Temperature Instability ◽  
Digital Multipliers

High speed digital multipliers are most efficiently used in many applications such as Fourier transform, discrete cosine transforms, and digital filtering. The throughput of the multipliers is based on speed of the multiplier, and then the entire performance of the circuit depends on it. The pMOS transistor in negative bias cause negative bias temperature instability (NBTI), which increases the threshold voltage of the transistor and reduces the multiplier speed. Similarly, the nMOS transistor in positive bias cause positive bias temperature instability (PBTI).These effects reduce the transistor speed and the system may fail due to timing violations. So here a new multiplier was designed with novel adaptive hold logic (AHL) using Radix-4 Modified Booth Multiplier. By using Radix-4 Modified Booth Encoding (MBE), we can reduce the number of partial products by half. Modified booth multiplier helps to provide higher throughput with low power consumption. This can adjust the AHL circuit to reduce the performance degradation. The expected result will be reduce threshold voltage, increase throughput and speed and also reduce power. This modified multiplier design is coded by Verilog and simulated using Xilinx ISE 12.1 and implemented in Spartan 3E FPGA kit.

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