FORMATION OF CRACK-LIKE DIFFUSION WEDGES AND COMPRESSIVE STRESS EVOLUTION DURING THIN FILM GROWTH WITH INHOMOGENEOUS GRAIN BOUNDARY DIFFUSIVITY

2009 ◽  
Vol 01 (01) ◽  
pp. 1-19 ◽  
Author(s):  
TANMAY K. BHANDAKKAR ◽  
ERIC CHASON ◽  
HUAJIAN GAO

We consider the effects of inhomogeneous grain boundary (GB) diffusivity on the formation of crack-like grain boundary diffusion wedges and evolution of compressive stress during the growth of a polycrystalline thin film on a substrate with a perfectly bonded film-substrate interface. The problem is formulated as a class of moving boundary diffusion problems with fully coupled elasticity, GB diffusion and film growth. The inhomogeneous GB mobility leads to a set of hypersingular integro-differential equations which are solved by a special numerical scheme. During the film growth, atoms diffuse into the GBs due to the tensile coalescence stress in the film associated with GB formation. We show that, at deposition rates comparable to the diffusion time scale, such GB diffusion leads to temporal decay of GB traction and induces crack-like singular stress concentration at the roots of the GBs. For a slowly growing high mobility thin film, the stress intensity factor near the tip of the diffusion wedge is comparable to that of a GB diffusion wedge under annealing conditions and can lead to nucleation of dislocations, which in turn can influence stress evolution during film growth. Furthermore, the higher chemical potential at the film surface can overdrive adatoms into GBs and result in a final compressive stress in the film. Our simulations on cyclic film deposition and growth interruption processes qualitatively reproduced the experimentally observed behavior of GB mobility on the Stress-Thickness evolution during deposition, the stress relaxation during growth interruption, as well as the dependence of steady state stress on the deposition rate.

Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.


2021 ◽  
Vol 96 (5) ◽  
pp. 055706
Author(s):  
Songyou Lian ◽  
Congkang Xu ◽  
Jiangyong Wang ◽  
Hendrik C Swart ◽  
Jacobus J Terblans

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.


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