Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

2009 ◽  
Vol 2 ◽  
pp. 054502 ◽  
Author(s):  
Kazuhiko Endo ◽  
Shin-ichi O'uchi ◽  
Yuki Ishikawa ◽  
Yongxum Liu ◽  
Takashi Matsukawa ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Effect Transistor

Performance Evaluation of Negative-Capacitance Fin-Type Field Effect Transistor-Based Static Random-Access Memory with Mixed-Mode Simulation

2021 ◽  
Vol 16 (3) ◽  
pp. 414-419
Author(s):  
Xianlong Chen ◽  
Weifeng Lü ◽  
Bo Liu ◽  
Tiejun Du ◽  
Mi Lin
Keyword(s):  
Mixed Mode ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Negative Capacitance ◽  
Access Memory ◽  
Ferroelectric Layer ◽  
Effect Transistor

Electrical characteristics of fin-type field-effect transistor with negative capacitance effect (NCFinFET) are investigated coupled with the Landau-Khalatnikov equation for ferroelectric materials in this study. Moreover, Technology Computer Aided Design (TCAD) mixed-mode simulation is carried out to evaluate and compare the performance of NCFinFET-based static random access memory cell (NC-SRAM) with a traditional FinFETbased SRAM one. It is shown NC-SRAM has higher static noise margin (SNM) and better anti-interference capability than conventional SRAM with the same supply voltage. The static read, hold, and write noise margins (RSNM, HSNM, and WSNM, respectively) for NC-SRAM increased by 10%, 30%, and 15%, respectively, and the access disturb stability improved by 80%. Simulation results also reveal that the read stability increases with increasing ferroelectric layer thickness, while the write stability exhibits a non-monotonic trend with ferroelectric layer thickness for NC-SRAM.

Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell

2010 ◽  
Vol 49 (10) ◽  
pp. 104202 ◽  
Author(s):  
Jae Young Song ◽  
Jong Pil Kim ◽  
Sang Wan Kim ◽  
Jeong-Hoon Oh ◽  
Kyung-Chang Ryoo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Effect Transistor
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