A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bd03 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BD03

Author(s):

Hyoungjun Na ◽

Tetsuo Endoh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bd03 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BD03 ◽

Author(s):

Hyoungjun Na ◽

Tetsuo Endoh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.040209 ◽

2010 ◽

Vol 49 (4) ◽

pp. 040209 ◽

Author(s):

Shuu'ichirou Yamamoto ◽

Yusuke Shuto ◽

Satoshi Sugahara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.104202 ◽

2010 ◽

Vol 49 (10) ◽

pp. 104202 ◽

Author(s):

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jeong-Hoon Oh ◽

Kyung-Chang Ryoo ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Access Memory ◽

Effect Transistor

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MODELING OF A FERROELECTRIC FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY CELL

Integrated Ferroelectrics ◽

10.1080/10584580802091813 ◽

2008 ◽

Vol 96 (1) ◽

pp. 69-74 ◽

Author(s):

Thomas A. Phillips ◽

Todd C. Macleod ◽

Fat D. Ho

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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An Ultra-low-power Static Random-Access Memory Cell Using Tunneling Field Effect Transistor

International Journal of Engineering ◽

10.5829/ije.2020.33.11b.13 ◽

2020 ◽

Vol 33 (11) ◽

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Ultra Low Power ◽

Effect Transistor

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A three-bit-per-cell via-type resistive-random-access-memory gated metal-oxide-semiconductor-field-effect-transistor non-volatile-memory (vRG-MOSFET NVM) with the FORMing-free characteristic

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac33c3 ◽

2021 ◽

Author(s):

E Ray Hsieh ◽

Yi Xiang Huang ◽

You Hung Ye ◽

Zih Ying Wang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Access Memory ◽

Non Volatile Memory ◽

Effect Transistor

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Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

Applied Physics Express ◽

10.1143/apex.2.054502 ◽

2009 ◽

Vol 2 ◽

pp. 054502 ◽

Author(s):

Kazuhiko Endo ◽

Shin-ichi O'uchi ◽

Yuki Ishikawa ◽

Yongxum Liu ◽

Takashi Matsukawa ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Effect Transistor

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A0.25 µmComplementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET) using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.865 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 865-868 ◽

Author(s):

Dong Jin Jung ◽

Jae Kwan Park ◽

Kang Yoon Lee ◽

Nam Soo Kang ◽

Ki Nam Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Dynamic Random Access Memory ◽

Oxide Semiconductor ◽

Access Memory ◽

Effect Transistor

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Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.17007 ◽

2019 ◽

Vol 19 (10) ◽

pp. 6023-6030

Author(s):

Young Jun Yoon ◽

Min Su Cho ◽

Bo Gyeong Kim ◽

Jae Hwa Seo ◽

In Man Kang

Keyword(s):

Retention Time ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Access Memory ◽

Effect Transistor

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A Multi-Pillar Vertical Metal–Oxide–Semiconductor Field-Effect Transistor Type Dynamic Random Access Memory Core Circuit for Sub-1 V Core Voltage Operation without Overdrive Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04ce08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CE08 ◽

Author(s):

Hyoungjun Na ◽

Tetsuo Endoh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Dynamic Random Access Memory ◽

Oxide Semiconductor ◽

Access Memory ◽

Effect Transistor

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