Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Applied Physics Express ◽

10.1143/apex.2.124501 ◽

2009 ◽

Vol 2 (12) ◽

pp. 124501 ◽

Author(s):

Masafumi Yokoyama ◽

Tetsuji Yasuda ◽

Hideki Takagi ◽

Hisashi Yamada ◽

Noboru Fukuhara ◽

...

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body ◽

Direct Wafer Bonding

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Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Applied Physics Letters ◽

10.1063/1.4906922 ◽

2015 ◽

Vol 106 (7) ◽

pp. 073503 ◽

Author(s):

Masafumi Yokoyama ◽

Haruki Yokoyama ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Wafer Bonding

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GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology

10.7567/ssdm.2013.ps-6-33l ◽

2013 ◽

Author(s):

M. Yokoyama ◽

H. Yokoyama ◽

M. Takenaka ◽

S. Takagi

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Wafer Bonding ◽

Bonding Technology

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InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Journal of Applied Physics ◽

10.1063/1.5049518 ◽

2019 ◽

Vol 125 (11) ◽

pp. 114501 ◽

Author(s):

Masafumi Yokoyama ◽

Haruki Yokoyama ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Wafer Bonding

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III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Applied Physics Express ◽

10.1143/apex.5.076501 ◽

2012 ◽

Vol 5 (7) ◽

pp. 076501 ◽

Author(s):

Masafumi Yokoyama ◽

Sanghyeon Kim ◽

Rui Zhang ◽

Noriyuki Taoka ◽

Yuji Urabe ◽

...

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source ◽

Channel Integration ◽

Direct Wafer Bonding

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Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

Applied Physics Express ◽

10.1143/apex.4.054202 ◽

2011 ◽

Vol 4 (5) ◽

pp. 054202 ◽

Author(s):

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Hisashi Yamada ◽

Noboru Fukuhara ◽

...

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrates ◽

Direct Wafer Bonding ◽

Passivation Layers

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

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Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.5086890 ◽

2019 ◽

Vol 114 (13) ◽

pp. 132101 ◽

Author(s):

Yukun Li ◽

Rui Zhang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Electrical Characteristics and Crystal Quality Analysis of Thin-Body Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c045 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C045 ◽

Author(s):

Toshiaki Iwamatsu ◽

Takashi Terada ◽

Kozo Ishikawa ◽

Hidekazu Oda ◽

Yasuo Inoue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Crystal Quality ◽

Oxide Semiconductor ◽

Quality Analysis ◽

Thin Body ◽

Electrical Characteristics

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Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.3889 ◽

2005 ◽

Vol 44 (6A) ◽

pp. 3889-3892 ◽

Author(s):

Gen Tsutsui ◽

Masumi Saitoh ◽

Toshiharu Nagumo ◽

Toshiro Hiramoto

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body ◽

Mobility Behavior

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Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Journal of Applied Physics ◽

10.1063/1.4828481 ◽

2013 ◽

Vol 114 (16) ◽

pp. 164512 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body ◽

Si Substrate ◽

Physical Understanding

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