Effects of Trimethylgallium Flow Rate ona-Plane GaN Growth onr-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth

2011 ◽  
Vol 4 (3) ◽  
pp. 035501 ◽  
Author(s):  
Hsiao-Chiu Hsu ◽  
Yan-Kuin Su ◽  
Shyh-Jer Huang ◽  
Ricky W. Chuang ◽  
Shin-Hao Cheng ◽  
...  
Keyword(s):  
Flow Rate ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth

Non-edge-triggered inversion from Ga polarity to N polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowth

2019 ◽  
Vol 52 (3) ◽  
pp. 532-537 ◽  
Author(s):  
Hyunkyu Lee ◽  
Dongsoo Jang ◽  
Donghoi Kim ◽  
Chinkyo Kim
Keyword(s):  
Flow Rate ◽  
Growth Front ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Growth ◽  
Polarity Inversion ◽  
Flat Region ◽  
Lateral Overgrowth ◽  
Sio2 Mask

It was previously reported that N-polar c-GaN domains nucleated in window openings on c-plane sapphire were inverted to Ga-polar domains at the edge of an SiO2 mask during epitaxial lateral overgrowth, but it was asserted that polarity inversion of N-polar GaN domains could not occur beyond the edge of the SiO2 mask. However, that assertion was demonstrated only in the case of a-facet-exposed GaN. It is reported here that polarity inversion from Ga polarity to N polarity of m-facet-exposed c-GaN domains occurred during epitaxial lateral overgrowth on the flat region beyond the edge of a circular-patterned SiO2 mask. An increased flow rate of NH3 during the epitaxial lateral overgrowth is thought to induce this type of non-edge-triggered polarity inversion. Further investigation reveals that non-edge-triggered polarity inversion is also possible when the a facet is exposed at the lateral growth front of Ga-polar GaN domains.

Influence of SiH4 Flow Rate on GaN Films with In Situ SiNx Mask on Sapphire Surface

2014 ◽  
Vol 904 ◽  
pp. 29-32
Author(s):  
Zhong Hui Li ◽  
Da Qing Peng ◽  
Wei Ke Luo ◽  
Liang Li ◽  
Dong Guo Zhong
Keyword(s):  
Flow Rate ◽  
Sapphire Substrate ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Time ◽  
X Ray Diffraction ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Substrate Properties ◽  
Dislocations Density

Sapphire substrate was treated by SiH4under NH3atmosphere before GaN growth and nanosize islands SiNxmask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4flow rate is an important factor affecting the size and density of SiNxmask besides SiH4treatment time.The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2.

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

CrystEngComm ◽  
2012 ◽  
Vol 14 (17) ◽  
pp. 5558 ◽  
Author(s):  
Bo-Ra Yeom ◽  
R. Navamathavan ◽  
Ji-Hyeon Park ◽  
Yong-Ho Ra ◽  
Cheul-Ro Lee
Keyword(s):  
Growth Behavior ◽  
Epitaxial Lateral Overgrowth ◽  
Gan Nanowires ◽  
Lateral Overgrowth

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

2006 ◽  
Vol 203 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
K. Nakano ◽  
M. Imura ◽  
G. Narita ◽  
T. Kitano ◽  
Y. Hirose ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates
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