Non-edge-triggered inversion from Ga polarity to N polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowth

2019 ◽  
Vol 52 (3) ◽  
pp. 532-537 ◽  
Author(s):  
Hyunkyu Lee ◽  
Dongsoo Jang ◽  
Donghoi Kim ◽  
Chinkyo Kim
Keyword(s):  
Flow Rate ◽  
Growth Front ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Growth ◽  
Polarity Inversion ◽  
Flat Region ◽  
Lateral Overgrowth ◽  
Sio2 Mask

It was previously reported that N-polar c-GaN domains nucleated in window openings on c-plane sapphire were inverted to Ga-polar domains at the edge of an SiO2 mask during epitaxial lateral overgrowth, but it was asserted that polarity inversion of N-polar GaN domains could not occur beyond the edge of the SiO2 mask. However, that assertion was demonstrated only in the case of a-facet-exposed GaN. It is reported here that polarity inversion from Ga polarity to N polarity of m-facet-exposed c-GaN domains occurred during epitaxial lateral overgrowth on the flat region beyond the edge of a circular-patterned SiO2 mask. An increased flow rate of NH3 during the epitaxial lateral overgrowth is thought to induce this type of non-edge-triggered polarity inversion. Further investigation reveals that non-edge-triggered polarity inversion is also possible when the a facet is exposed at the lateral growth front of Ga-polar GaN domains.

Effects of Trimethylgallium Flow Rate ona-Plane GaN Growth onr-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth

2011 ◽  
Vol 4 (3) ◽  
pp. 035501 ◽  
Author(s):  
Hsiao-Chiu Hsu ◽  
Yan-Kuin Su ◽  
Shyh-Jer Huang ◽  
Ricky W. Chuang ◽  
Shin-Hao Cheng ◽  
...  
Keyword(s):  
Flow Rate ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth

scholarly journals Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

1998 ◽  
Vol 537 ◽  
Author(s):  
Michael E. Coltrin ◽  
Christine C. Willan ◽  
Michael E. Bartram ◽  
Jung Han ◽  
Nancy Missert ◽  
...  
Keyword(s):  
Secondary Growth ◽  
Reaction Diffusion ◽  
Growth Front ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Surface ◽  
Phase Reaction ◽  
Material Quality ◽  
Lateral Overgrowth ◽  
Reaction Diffusion Model ◽  
Convergence Line

AbstractGrowth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1 μm nucleation zones. Although emission is comprised of both UV (∼365nm) and yellow (∼550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundary

2018 ◽  
Vol 51 (6) ◽  
pp. 1551-1555 ◽  
Author(s):  
Hwa Seob Kim ◽  
Hyunkyu Lee ◽  
Dongsoo Jang ◽  
Donghoi Kim ◽  
Chinkyo Kim
Keyword(s):  
Domain Boundary ◽  
Epitaxial Lateral Overgrowth ◽  
Boundary Structure ◽  
Geometrical Factor ◽  
Mask Pattern ◽  
Polarity Inversion ◽  
Lateral Overgrowth ◽  
Inversion Domain ◽  
Proposed Model ◽  
Inversion Domain Boundaries

During epitaxial lateral overgrowth, the lateral polarity inversion of c-GaN domains from Ga to N polarity, triggered at the boundary of an SiO2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the \{11{\overline 2}0\} plane, although the formation energy of IDBs on the \{1{\overline 1}00\} plane is known to be lower than that on the \{11{\overline 2}0\} plane. A model that takes a geometrical factor into consideration can explain this preferential tendency of IDB formation on the \{11{\overline 2}0\} plane, and computational simulations based on the proposed model are consistent with experimental results. In contrast with the vertically upright IDBs observed in N-to-Ga polarity inversion, vertically slanted IDBs were formed in some samples during the inversion from Ga to N polarity. These polarity inversions, which appeared to randomly occur on the mask pattern, turned out to be triggered at the mask pattern boundaries.

scholarly journals Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

1999 ◽  
Vol 4 (S1) ◽  
pp. 588-593 ◽  
Author(s):  
Michael E. Coltrin ◽  
Christine C. Willan ◽  
Michael E. Bartram ◽  
Jung Han ◽  
Nancy Missert ◽  
...  
Keyword(s):  
Secondary Growth ◽  
Reaction Diffusion ◽  
Growth Front ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Surface ◽  
Phase Reaction ◽  
Material Quality ◽  
Lateral Overgrowth ◽  
Reaction Diffusion Model ◽  
Convergence Line

Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1μm nucleation zones. Although emission is comprised of both UV (∼365nm) and yellow (∼550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

Influence of SiH4 Flow Rate on GaN Films with In Situ SiNx Mask on Sapphire Surface

2014 ◽  
Vol 904 ◽  
pp. 29-32
Author(s):  
Zhong Hui Li ◽  
Da Qing Peng ◽  
Wei Ke Luo ◽  
Liang Li ◽  
Dong Guo Zhong
Keyword(s):  
Flow Rate ◽  
Sapphire Substrate ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Time ◽  
X Ray Diffraction ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Substrate Properties ◽  
Dislocations Density

Sapphire substrate was treated by SiH4under NH3atmosphere before GaN growth and nanosize islands SiNxmask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4flow rate is an important factor affecting the size and density of SiNxmask besides SiH4treatment time.The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2.

Comparative study of epitaxial lateral overgrowth on semipolar (11-22) GaN by using stripe and hexagon SiO2 mask patterns

2018 ◽  
Vol 72 (2) ◽  
pp. 254-259 ◽  
Author(s):  
Hyunseok Na ◽  
Ki-Ryong Song ◽  
Jae-Hwan Lee ◽  
Sang-Hyun Han ◽  
Sung-Nam Lee
Keyword(s):  
Comparative Study ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Sio2 Mask

Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Kimura ◽  
C. Sasaoka ◽  
A. Sakai ◽  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Growth ◽  
Cross Sectional ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Sectional Shape

AbstractWe investigated the growth conditions for enhancing epitaxial lateral overgrowth (ELO) of GaN stripes selectively grown by low-pressure metalorganic vapor phase epitaxy. The ELO was enhanced for GaN <1100> stripes and with a small trimethylgallium flow-rate. This tendency did not depend on mask materials. The cross-sectional shape of the GaN <1100> stripes was trapezoidal for SiO2 masks, and rectangular for silicon nitride (SiN2) masks in a certain growth condition. A low dislocation density in the ELO region was obtained not only for the SiO2 masks but also for the SiN2 masks.

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type
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