Influence of SiH4 Flow Rate on GaN Films with In Situ SiNx Mask on Sapphire Surface

2014 ◽  
Vol 904 ◽  
pp. 29-32
Author(s):  
Zhong Hui Li ◽  
Da Qing Peng ◽  
Wei Ke Luo ◽  
Liang Li ◽  
Dong Guo Zhong
Keyword(s):  
Flow Rate ◽  
Sapphire Substrate ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Time ◽  
X Ray Diffraction ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Substrate Properties ◽  
Dislocations Density

Sapphire substrate was treated by SiH4under NH3atmosphere before GaN growth and nanosize islands SiNxmask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4flow rate is an important factor affecting the size and density of SiNxmask besides SiH4treatment time.The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2.

AlxGa1−xN GROWTH BY Si/N TREATMENT OF SAPPHIRE SUBSTRATE: COMPARISON WITH OTHERS GROWTH TECHNIQUES

2019 ◽  
Vol 27 (03) ◽  
pp. 1950116
Author(s):  
I. HALIDOU ◽  
A. TOURÉ ◽  
B. EL JANI
Keyword(s):  
Sapphire Substrate ◽  
Three Dimensional ◽  
Epitaxial Lateral Overgrowth ◽  
Treatment Technique ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Nucleation Layer ◽  
Lateral Overgrowth ◽  
N Treatment

AlxGa[Formula: see text]N films were grown on Si/N-treated sapphire substrate by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) in a home-made vertical reactor. This process can be considered as randomly in situ epitaxial lateral overgrowth (ELO) technology. The growth firstly begins by three-dimensional (3D) mode and is completed in two-dimensional (2D) growth mode as shown by real time in situ laser [Formula: see text][Formula: see text]nm[Formula: see text] reflectometry measurements and confirmed by scanning electron microscopy (SEM) images. Secondary ion mass spectroscopy (SIMS) measurements evidence Al composition pulling effect in the AlxGa[Formula: see text]N layer. The Si/N treatment technique is compared to conventional AlxGa[Formula: see text]N growth techniques. The results of high-resolution X-ray diffraction (HRXRD), photoluminescence (PL) measurements and SEM images agree well on the fact that the Si/N treatment produces AlxGa[Formula: see text]N layers with comparable qualities of AlxGa[Formula: see text]N layers grown on high temperature GaN template but with much higher qualities than AlxGa[Formula: see text]N layers grown on low temperature AlN nucleation layer. Moreover, the Si/N treatment technique permits the growth of high quality AlxGa[Formula: see text]N layers with appreciable thicknesses with respect to the others techniques.

scholarly journals Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2AlN/Sapphire Template

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Yu-An Chen ◽  
Cheng-Huang Kuo ◽  
Li-Chuan Chang ◽  
Ji-Pu Wu
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Air Voids ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Gan Film ◽  
Scanning Electron

GaN epitaxial layers with embedded air voids grown on patterned SiO2AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2) and (1 0 2) peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

Raman study of Epitaxial lateral Overgrowth of GaN on Patterned Sapphire Substrate

2007 ◽  
Vol 31 ◽  
pp. 111-113
Author(s):  
D.H. Kang ◽  
Jae Chul Song ◽  
H. Song ◽  
Dong Wook Kim ◽  
I.H. Lee ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Time ◽  
Band Edge Emission ◽  
Patterned Sapphire Substrate ◽  
Lateral Overgrowth ◽  
Raman Modes ◽  
Raman Study

Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Devitrification products of rapidly solidified Ni-Nb amorphous alloys.

1990 ◽  
Vol 48 (4) ◽  
pp. 950-951
Author(s):  
G. A. Bertero ◽  
W.H. Hofmeister ◽  
N.D. Evans ◽  
J.E. Wittig ◽  
R.J. Bayuzick
Keyword(s):  
Electron Microscopy ◽  
Amorphous Structure ◽  
Sulphuric Acid Solution ◽  
X Ray Diffraction ◽  
High Fracture ◽  
Transmission Electron ◽  
Xrd Techniques ◽  
Rapidly Solidified ◽  
Electromagnetically Levitated

Rapid solidification of Ni-Nb alloys promotes the formation of amorphous structure. Preliminary results indicate promising elastic properties and high fracture strength for the metallic glass. Knowledge of the thermal stability of the amorphus alloy and the changes in properties with temperature is therefore of prime importance. In this work rapidly solidified Ni-Nb alloys were analyzed with transmission electron microscopy (TEM) during in-situ heating experiments and after isothermal annealing of bulk samples. Differential thermal analysis (DTA), scanning electron microscopy (SEM) and x-ray diffraction (XRD) techniques were also used to characterize both the solidification and devitrification sequences.Samples of Ni-44 at.% Nb were electromagnetically levitated, melted, and rapidly solidified by splatquenching between two copper chill plates. The resulting samples were 100 to 200 μm thick discs of 2 to 3 cm diameter. TEM specimens were either ion-milled or alternatively electropolished in a methanol-10% sulphuric acid solution at 20 V and −40°C.

scholarly journals Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

2021 ◽  
Vol 10 (3) ◽  
pp. 578-586
Author(s):  
Lin-Kun Shi ◽  
Xiaobing Zhou ◽  
Jian-Qing Dai ◽  
Ke Chen ◽  
Zhengren Huang ◽  
...  
Keyword(s):  
Spark Plasma Sintering ◽  
Atomic Scale ◽  
Max Phase ◽  
X Ray Diffraction ◽  
Selected Area Electron Diffraction ◽  
Plasma Sintering ◽  
Transmission Electron ◽  
Spark Plasma ◽  
Diffraction Patterns

AbstractA nano-laminated Y3Si2C2 ceramic material was successfully synthesized via an in situ reaction between YH2 and SiC using spark plasma sintering technology. A MAX phase-like ternary layered structure of Y3Si2C2 was observed at the atomic-scale by high resolution transmission electron microscopy. The lattice parameters calculated from both X-ray diffraction and selected area electron diffraction patterns are in good agreement with the reported theoretical results. The nano-laminated fracture of kink boundaries, delamination, and slipping were observed at the tip of the Vickers indents. The elastic modulus and Vickers hardness of Y3Si2C2 ceramics (with 5.5 wt% Y2O3) sintered at 1500 °C were 156 and 6.4 GPa, respectively. The corresponding values of thermal and electrical conductivity were 13.7 W·m-1·K-1 and 6.3×105 S·m-1, respectively.

scholarly journals Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 698
Author(s):  
Wenwang Wei ◽  
Yi Peng ◽  
Jiabin Wang ◽  
Muhammad Farooq Saleem ◽  
Wen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Compressive Stress ◽  
Sapphire Substrate ◽  
Light Transmission ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Transmission Electron ◽  
Nano Patterning

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

scholarly journals Fracture in Bulk Amorphous Alloys

1998 ◽  
Vol 554 ◽  
Author(s):  
J. A. Horton ◽  
J. L. Wright ◽  
J. H. Schneibel
Keyword(s):  
Crack Propagation ◽  
Crack Growth ◽  
Shear Bands ◽  
Bulk Amorphous Alloy ◽  
In Situ Tem ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Crack Tips ◽  
Temperature Fracture

AbstractThe fracture behavior of a Zr-based bulk amorphous alloy, Zr-10 Al-5 Ti-17.9 Cu-14.6Ni (at.%), was examined by transmission electron microscopy (TEM) and x-ray diffraction forany evidence of crystallization preceding crack propagation. No evidence for crystallizationwas found in shear bands in compression specimens or at the fracture surface in tensile specimens.In- situ TEM deformation experiments were performed to more closely examine actualcrack tip regions. During the in-situ deformation experiment, controlled crack growth occurredto the point where the specimen was approximately 20 μm thick at which point uncontrolledcrack growth occurred. No evidence of any crystallization was found at the crack tips or thecrack flanks. Subsequent scanning microscope examination showed that the uncontrolledcrack growth region exhibited ridges and veins that appeared to have resulted from melting. Performing the deformations, both bulk and in-situ TEM, at liquid nitrogen temperatures (LN2) resulted in an increase in the amount of controlled crack growth. The surface roughness of the bulk regions fractured at LN2 temperatures corresponded with the roughness of the crack propagation observed during the in-situ TEM experiment, suggesting that the smooth-appearing room temperature fracture surfaces may also be a result of localized melting.

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