Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Zhiyuan He; Jialin Li; Yuhua Wen; Zhen Shen; Yao Yao; Fan Yang; Yiqiang Ni; Zhisheng Wu; Baijun Zhang; Yang Liu

doi:10.7567/jjap.51.054103

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.054103 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054103 ◽

Cited By ~ 5

Author(s):

Zhiyuan He ◽

Jialin Li ◽

Yuhua Wen ◽

Zhen Shen ◽

Yao Yao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Applied Physics Express ◽

10.1143/apex.4.114102 ◽

2011 ◽

Vol 4 (11) ◽

pp. 114102 ◽

Cited By ~ 53

Author(s):

Herwig Hahn ◽

Gerrit Lükens ◽

Nico Ketteniss ◽

Holger Kalisch ◽

Andrei Vescan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054103 ◽

2012 ◽

Vol 51 ◽

pp. 054103 ◽

Cited By ~ 2

Author(s):

Zhiyuan He ◽

Jialin Li ◽

Yuhua Wen ◽

Zhen Shen ◽

Yao Yao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

Applied Physics Express ◽

10.1143/apex.5.084201 ◽

2012 ◽

Vol 5 (8) ◽

pp. 084201 ◽

Cited By ~ 10

Author(s):

Narihiko Maeda ◽

Masanobu Hiroki ◽

Satoshi Sasaki ◽

Yuichi Harada

Keyword(s):

High Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Temperature Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Recessed Gate

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4891258 ◽

2014 ◽

Vol 116 (4) ◽

pp. 044507 ◽

Cited By ~ 29

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Jingtao Zhao ◽

Yutang Wang ◽

...

Keyword(s):

Theoretical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

physica status solidi (c) ◽

10.1002/pssc.201100408 ◽

2012 ◽

Vol 9 (3-4) ◽

pp. 911-914 ◽

Cited By ~ 4

Author(s):

Martin Mikulics ◽

Hilde Hardtdegen ◽

Andreas Winden ◽

Alfred Fox ◽

Michel Marso ◽

...

Keyword(s):

Residual Strain ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors

10.1063/1.4848451 ◽

2013 ◽

Cited By ~ 4

Author(s):

Nitin Goyal ◽

Benjamin Iniguez ◽

Tor A. Fjeldly

Keyword(s):

Barrier Height ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Surface Barrier ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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