Carrier Concentration Dependence of Negative Longitudinal Magnetoresistance for n-InSb at 77 K

1980 ◽  
Vol 19 (3) ◽  
pp. 495-499 ◽  
Author(s):  
Kaoru Imamura ◽  
Katsuji Haruna ◽  
Isao Ohno
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Longitudinal Magnetoresistance

Carrier concentration dependence and impurity effects of microwave response in Bi2Sr2CaCu2O8+y

1996 ◽  
Vol 46 (S2) ◽  
pp. 1119-1120
Author(s):  
N. Katase ◽  
T. Shibauchi ◽  
T. Tamegai ◽  
I. Tsukada ◽  
K. Uchinokura
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Microwave Response ◽  
Impurity Effects

Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films

2007 ◽  
Vol 1035 ◽  
Author(s):  
Zheng Yang ◽  
Maurizio Biasini ◽  
Leelaprasanna J Mandalapu ◽  
Zheng Zuo ◽  
Ward P Beyermann ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Long Range ◽  
Room Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Electron Carrier ◽  
X Ray ◽  
Curie Temperatures

AbstractCo and Mn ions were implanted into n-type ZnO thin films with different electron carrier concentrations. X-ray diffraction measurements show that the ZnO:Co and ZnO:Mn thin films are of high crystallinity. From magnetization measurements, ferromagnetism was observed in both n-type ZnO:Co and n-type ZnO:Mn thin films with Curie temperatures well-above room temperature. Furthermore, the electron carrier concentration dependence of the saturated magnetization was measured in both types of thin films, and our results support an electron-mediated mechanism for ferromagnetism in ZnO:Co, as predicted by theory. However, our measurements seem to contradict theory for ZnO:Mn, which only predicts long-range ferromagnetism for p-type mediated material.

Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

2005 ◽  
Vol 98 (9) ◽  
pp. 093714 ◽  
Author(s):  
Youn-Seon Kang ◽  
Lawrence H. Robins ◽  
Anthony G. Birdwell ◽  
Alexander J. Shapiro ◽  
W. Robert Thurber ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Mole Fraction

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

2018 ◽  
Vol 123 (2) ◽  
pp. 025707 ◽  
Author(s):  
T. Tawara ◽  
S. Matsunaga ◽  
T. Fujimoto ◽  
M. Ryo ◽  
M. Miyazato ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Stacking Faults ◽  
Pin Diodes

Carrier concentration dependence of the mobility in organic semiconductors

2007 ◽  
Vol 157 (4-5) ◽  
pp. 243-246 ◽  
Author(s):  
Ling Li ◽  
Gregor Meller ◽  
Hans Kosina
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Organic Semiconductors
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