X-Ray Double-Crystal Method for Crystal Lattice Parameter Measurements Using Cu Kα Doublet

1982 ◽  
Vol 21 (Part 1, No. 10) ◽  
pp. 1525-1525 ◽  
Author(s):  
Taichiro Fukumori ◽  
Kōji Futagami ◽  
Kuniyoshi Matsunaga
2015 ◽  
Vol 233-234 ◽  
pp. 55-59
Author(s):  
Marina Kirman ◽  
Artem Talantsev ◽  
Roman Morgunov

The magnetization dynamics of metal-organic crystals has been studied in low frequency AC magnetic field. Four modes of domain wall motion (Debye relaxation, creep, slide and over - barrier motion (switching)) were distinguished in [MnII(H(R/S)-pn)(H2O)] [MnIII(CN)6]⋅2H2O crystals. Debye relaxation and creep of the domain walls are sensitive to Peierls relief configuration controlled by crystal lattice chirality. Structural defects and periodical Peierls potential compete in the damping of the domain walls. Driving factor of this competition is ratio of the domain wall width to the crystal lattice parameter.


2021 ◽  
Vol 22 (1) ◽  
pp. 129-157
Author(s):  
D. V. Zaguliaev ◽  
S. V. Konovalov ◽  
Yu. F. Ivanov ◽  
V. E. Gromov ◽  
V. V. Shlyarov ◽  
...  

The study deals with the element–phase composition, microstructure evolution, crystal-lattice parameter, and microdistortions as well as the size of the coherent scattering region in the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys irradiated with the high-intensity electron beam. As revealed by the methods of x-ray phase analysis, the principal phases in untreated alloys are the aluminium-based solid solution, silicon, intermetallics, and Fe2Al9Si2 phase. In addition, the Cu9Al4 phase is detected in Al–10.65Si–2.11Cu alloy. Processing alloys with the pulsed electron beam induces the transformation of lattice parameters of Al–10.65Si–2.11Cu (aluminium-based solid solution) and Al–5.39Si–1.33Cu (Al1 and Al2 phases). The reason for the crystal-lattice parameter change in the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys is suggested to be the changing concentration of alloying elements in the solid solution of these phases. As established, if a density of electron beam is of 30 and 50 J/cm2, the silicon and intermetallic compounds dissolve in the modified layer. The state-of-the-art methods of the physical materials science made possible to establish the formation of a layer with a nanocrystalline structure of the cell-type crystallization because of the material surface irradiation. The thickness of a modified layer depends on the parameters of the electron-beam treatment and reaches maximum of 90 µm at the energy density of 50 J/cm2. According to the transmission (TEM) and scanning (SEM) electron microscopy data, the silicon particles occupy the cell boundaries. Such changes in the structural and phase states of the materials response on their mechanical characteristics. To characterize the surface properties, the microhardness, wear parameter, and friction coefficient values are determined directly on the irradiated surface for all modification variants. As shown, the irradiation of the material surface with an intensive electron beam increases wear resistance and microhardness of the Al–10.65Si–2.11Cu and Al–5.39Si–1.33Cu alloys.


Sequences of high Bragg-angle (0 B = 74°) double-crystal X-ray topographs taken at the SRS (Daresbury, U.K.) have yielded precise measurements of lattice parameter differences between growth sectors of different crystallographic forms in a large undoped synthetic diamond whose type Ib infrared absorption spectrum (principal peak at 1130 cm -1 ) indicated atomically dispersed nitrogen, singly substituting for carbon, as the only detectable impurity. The plate-shaped specimen, polished parallel to (110), 5.0 x 3.2 mm 2 in area, 0.7 mm thick, possessed an unusually well developed (110) growth sector containing nitrogen impurity concentration of only ca. 10 -6 , which served as an internal standard of pure-diamond lattice parameter with which lattice parameters of nitrogen-containing growth sectors were compared. The specimen’s suitability for precision diffractometry was checked by comprehensive tests using optical microscope techniques, cathodoluminescence and single-crystal X-ray topography. The double-crystal combination was silicon reference crystal, asymmetric 175 reflection, with diamond specimen symmetrical 440 reflection. The principal measurement was the increase of the lattice parameter, a 0 , of the (111) growth sector (nitrogen content 88 + 7 parts per 10 6 atomic) relative to that of the (110) sector: Aa 0 / a 0 = 1.18 + 0.07 x 10 -5 . In terms of measured infrared absorption coefficient at 1130 cm -1 , this gives Aa 0/a 0 = (2.95 + 0.27) x 10 -6 [p(1130 cm -1 )/cm -1 ], which is believed to hold for growth sectors of all crystallographic forms. Combination with the nitrogen assay findings of Woods, van Wyk & Collins ( Phil. Mag. B 62. 589-595 (1990)) provides a direct relation to c N , the fractional atomic concentration of substitutional nitrogen, as A a 0 / a 0 = (0.14 + 0.02) c N , which indicates that the effective volume of a single substitutional nitrogen atom in diamond is 1.41 +0.06 times that of the carbon atom it replaces. This substantial dilatation conflicts with several models for the substitutional nitrogen structure.


2015 ◽  
Vol 1784 ◽  
Author(s):  
Elena V. Ushakova ◽  
Valery V. Golubkov ◽  
Aleksandr P. Litvin ◽  
Peter S. Parfenov ◽  
Sergei A. Cherevkov ◽  
...  

ABSTRACTThe superstructures of different morphology (superlattices and supercrystals) are obtained by self-organization of lead sulfide quantum dots (QDs) on a substrate. In contrast to the SAXS patterns of isolated QDs in solutions, the X-ray intensity from ordered superstructures is modulated by the interference from the QDs in SLs or SCs leading to occurrence of the intense peaks at small scattering angles. By indexing the peaks in the SAXS patterns it is concluded that QD SLs are close-packed QD ensembles with the lattice parameter close to the dot diameter and QD SCs have primitive orthorhombic crystal lattice. Absorption and photoluminescence bands of superstructures are also analyzed.


Author(s):  
Михаил Владимирович Старицын ◽  
Михаил Леонидович Федосеев ◽  
Евгений Юрьевич Каптелов ◽  
Станислав Викторович Сенкевич ◽  
Игорь Петрович Пронин

В работе обсуждаются возможности тонкого варьирования состава субмикронных сегнетоэлектрических пленок твердых растворов цирконата-титаната свинца, соответствующих области морфотропной фазовой границы. Варьирование состава осуществлялось путем изменения расстояния от мишени до подложки в диапазоне 30 - 70 мм в установке высокочастотного магнетронного распыления керамической мишени при осаждении пленок на «холодную» подложку платинированного кремния. Это позволило изменять состав осаждаемых пленок (т.е., элементное соотношение атомов Zr и Ti) в диапазоне 0 -1,5% при сохранении однофазности сформированных перовскитовых пленок в процессе отжига при 580°C. При этом пленки характеризовались элементной неоднородностью состава по толщине, достигающей нескольких процентов. Толщина тонких слоев цирконата-титаната свинца составляла 500 нм. Исследовались изменения микроструктуры и параметров кристаллической решетки. Изменения состава пленок сопровождались существенными изменениями характера сферолитовой микроструктуры и ростовой текстуры. Был обнаружен резкий скачок квазикубического параметра кристаллической решетки, причиной которого может являться фазовая трансформация сегнетоэлектрической фазы - от ромбоэдрической модификации к двухфазному состоянию, предположительно состоящему из моноклинной и тетрагональной модификаций. The paper discusses the possibility of a fine variation in the composition of submicron ferroelectric films of lead zirconate titanate solid solutions corresponding to a morphotropic phase boundary. Composition was varied by changing the distance from the target to the substrate in the range of 30 - 70 mm in an installation for radio-frequency magnetron sputtering of a ceramic target, in which films deposition occurred on a «cold» platinized silicon substrate. This made it possible to change the composition of the deposited films (i.e., the elemental ratio of Zr and Ti atoms) in the range of 0 - 1,5% while maintaining the single-phase perovskite films annealed at 580 °С. In this case, the films were characterized by elemental inhomogeneity of the composition over the thickness, reaching several percents. The thickness of thin lead zirconate titanate layers was 500 nm. Changes in the microstructure and crystal lattice parameters were studied. The change in the composition of the films was accompanied by significant changes in the nature of the spherulite microstructure and growth texture. A sharp jump in the quasi-cubic crystal lattice parameter was discovered, which may be caused by the phase transformation of the ferroelectric phase - from the rhombohedral modification to the two-phase state, presumably consisting of monoclinic and tetragonal modifications.


2020 ◽  
Author(s):  
D. V. Zaguliaev ◽  
Yu. F. Ivanov ◽  
A. A. Leonov ◽  
D. F. Yakupov ◽  
Yu. A. Rubannikova ◽  
...  

1971 ◽  
Vol 15 ◽  
pp. 504-515 ◽  
Author(s):  
E. H. teKaat ◽  
G. H. Schwuttke

Double crystal diffractometer measurements on silicon bombarded to a fluence >1016ions/cm2with 1 MeV deuterium and 2 MeV nitrogen are reported. Such measurements provide insight into radiation damage in silicon through the observation of Bragg case pendelloesung fringes and double peak rocking curves. Bragg case pendelloesung fringes are used to determine nondestructively the projected range of ions in silicon. Double peak rocking curves are used to measure changes in lattice parameter with the ion dose. Finally, a model of radiation damage in silicon is presented.


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