Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.21.l4 ◽

1982 ◽

Vol 21 (Part 2, No. 1) ◽

pp. L4-L6 ◽

Author(s):

Seitaro Matsuo ◽

Yoshio Adachi

Keyword(s):

Ion Beam ◽

Ecr Ion Source ◽

Ion Beam Etching ◽

Reactive Ion Beam Etching

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A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO2 and Si

Journal of Vacuum Science and Technology ◽

10.1116/1.571659 ◽

1982 ◽

Vol 20 (4) ◽

pp. 986-988 ◽

Author(s):

M. Miyamura ◽

O. Tsukakoshi ◽

S. Komiya

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Ion Beam ◽

Electron Cyclotron ◽

Ion Beam Etching ◽

Reactive Ion Beam Etching

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Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

Revue de Physique Appliquée ◽

10.1051/rphysap:01989002403029500 ◽

1989 ◽

Vol 24 (3) ◽

pp. 295-308 ◽

Author(s):

C. Lejeune ◽

J.P. Grandchamp ◽

J.P. Gilles ◽

E. Collard ◽

P. Scheiblin

Keyword(s):

Surface Modification ◽

Ion Beam ◽

Ion Beam Etching ◽

Plasma Ion Source ◽

Reactive Ion Beam Etching

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A 16 cm broad‐beam ion source for ion‐beam etching of quartz wafers

Review of Scientific Instruments ◽

10.1063/1.1146799 ◽

1996 ◽

Vol 67 (3) ◽

pp. 1009-1011

Author(s):

Yusheng Rao ◽

Ming Li ◽

Bo Qi ◽

Fei Li

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

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Reactive Ion Beam Etching with CF 4: Characterization of a Kaufman Ion Source and Details of SiO2 Etching

Journal of The Electrochemical Society ◽

10.1149/1.2123929 ◽

1982 ◽

Vol 129 (3) ◽

pp. 585-591 ◽

Author(s):

T. M. Mayer ◽

R. A. Barker

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

Reactive Ion Beam Etching ◽

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Reactive ion beam etching of silicon compounds with a saddle–field ion source

Journal of Vacuum Science and Technology ◽

10.1116/1.571218 ◽

1981 ◽

Vol 19 (4) ◽

pp. 1398-1402 ◽

Author(s):

P. J. Revell ◽

G. F. Goldspink

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

Silicon Compounds ◽

Reactive Ion Beam Etching

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Reactive-ion-beam etching of InP in a chlorine–hydrogen mixture

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587515 ◽

1994 ◽

Vol 12 (6) ◽

pp. 3374 ◽

Author(s):

G. Allen Vawter

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

Hydrogen Mixture ◽

Reactive Ion Beam Etching

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Reactive Ion Beam Etching Using a Selective Gallium Doping Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.28.l1671 ◽

1989 ◽

Vol 28 (Part 2, No. 9) ◽

pp. L1671-L1672

Author(s):

Kyusaku Nishioka ◽

Hiroaki Morimoto ◽

Yoji Mashiko ◽

Tadao Kato

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

Gallium Doping ◽

Reactive Ion Beam Etching

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GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583273 ◽

1985 ◽

Vol 3 (1) ◽

pp. 402 ◽

Author(s):

K. Asakawa

Keyword(s):

Ion Beam ◽

Ion Beam Etching ◽

Fine Pattern ◽

Etching System ◽

Reactive Ion Beam Etching

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Mechanisms for fluorocarbon reactive ion beam etching of SiO2by simultaneous Auger electron spectroscopy measurements

Applied Physics Letters ◽

10.1063/1.95776 ◽

1985 ◽

Vol 46 (11) ◽

pp. 1103-1104 ◽

Author(s):

D. J. Thomson ◽

C. R. Helms

Keyword(s):

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Ion Beam ◽

Ion Beam Etching ◽

Reactive Ion Beam Etching

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Ion Beam Extraction from Large Bore 11 to 13 GHz ECR Ion Source with a Pair of Cylindrically Comb-Shaped Magnetic Fields

10.1063/1.3033680 ◽

2008 ◽

Author(s):

T. Watanabe ◽

T. Satani ◽

Y. Matsui ◽

F. Sato ◽

Y. Kato ◽

...

Keyword(s):

Magnetic Fields ◽

Ion Beam ◽

Beam Extraction ◽

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