Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L73-L75 ◽  
Author(s):  
Tadashi Saku ◽  
Hidetoshi Iwamura ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well ◽  
Room Temperature Operation

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Spectrum studies on a GaAs‐AlGaAs multi‐quantum‐well laser diode grown by molecular beam epitaxy

1983 ◽  
Vol 54 (5) ◽  
pp. 2692-2695 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Hideki Kobayashi ◽  
Yoshiji Horikoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well
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