IVA-4 room-temperature operation of 645-nm AlxGa1-xAs multi-quantum-well laser diodes grown by molecular-beam epitaxy

1985 ◽  
Vol 32 (11) ◽  
pp. 2540-2540
Author(s):  
H. Iwamura ◽  
T. Saku ◽  
Y. Hirayama ◽  
Y. Suzuki ◽  
H. Okamoto
1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L73-L75 ◽  
Author(s):  
Tadashi Saku ◽  
Hidetoshi Iwamura ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  

1997 ◽  
Vol 70 (20) ◽  
pp. 2753-2755 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  

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