Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
1986 ◽
Vol 25
(Part 2, No. 1)
◽
pp. L78-L80
◽
2020 ◽
Vol 33
(10)
◽
pp. 3179-3188
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
2003 ◽
Vol 386
◽
pp. 358-362
◽
1970 ◽
Vol 32
(6)
◽
pp. 1791-1797
2020 ◽
Vol 217
(14)
◽
pp. 1900868
◽
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