Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 2092-2099 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Akio Mimura ◽  
Nobutake Konishi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Si Thin Film

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

2017 ◽  
Vol 110 (13) ◽  
pp. 133503 ◽  
Author(s):  
Juan Paolo S. Bermundo ◽  
Yasuaki Ishikawa ◽  
Mami N. Fujii ◽  
Hiroshi Ikenoue ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
High Mobility ◽  
Excimer Laser Annealing ◽  
Krf Excimer Laser

Effects of Laser Annealing on the Furnace Annealed Amorphous Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Koo Han ◽  
Yong-Sang Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Furnace Annealing ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Temperature Furnace

AbstractThe performance of polysilicon thin film transistors fabricated by two-step annealing, which consists of furnace annealing and subsequent excimer laser annealing, is described. It was found that the average grain size of low temperature furnace annealed polysilicon films was several times larger than that of excimer laser annealed polysilicon films while the density of in-grain defect in low temperature furnace annealed films was much higher than that of excimer laser annealed film. The device characteristics of the low temperature furnace annealed polysilicon thin film transistors were improved significantly by postannealing, such as high temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. The density of trap states, which was extracted from the transfer curves of polysilicon thin film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing.

scholarly journals Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

2013 ◽  
Vol 102 (12) ◽  
pp. 122107 ◽  
Author(s):  
Mami Fujii ◽  
Yasuaki Ishikawa ◽  
Ryoichi Ishihara ◽  
Johan van der Cingel ◽  
Mohammad R. T. Mofrad ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
High Mobility ◽  
Excimer Laser Annealing
Sign in / Sign up

Export Citation Format

Share Document