Characterization of Boron-Doped Diamond Epitaxial Films

1991 ◽  
Vol 30 (Part 1, No. 7) ◽  
pp. 1363-1366 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
2013 ◽  
Vol 283 ◽  
pp. 900-905 ◽  
Author(s):  
Jiangwei Lv ◽  
Yujie Feng ◽  
Junfeng Liu ◽  
Youpeng Qu ◽  
Fuyi Cui

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2163-L2164 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2153-L2154 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori

2006 ◽  
Vol 17 (2) ◽  
pp. 257-264 ◽  
Author(s):  
Hugo B. Suffredini ◽  
Giancarlo R. Salazar-Banda ◽  
Sônia T. Tanimoto ◽  
Marcelo L. Calegaro ◽  
Sergio A. S. Machado ◽  
...  

1989 ◽  
Vol 28 (Part 1, No. 6) ◽  
pp. 1066-1071 ◽  
Author(s):  
Ken Okano ◽  
Hidetoshi Naruki ◽  
Yukio Akiba ◽  
Tateki Kurosu ◽  
Masamori Iida ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
Takashi Tsuno ◽  
Takahiro Imai ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.


1995 ◽  
Vol 4 (5-6) ◽  
pp. 678-683 ◽  
Author(s):  
R. Locher ◽  
J. Wagner ◽  
F. Fuchs ◽  
M. Maier ◽  
P. Gonon ◽  
...  

2011 ◽  
Vol 204-210 ◽  
pp. 1691-1696
Author(s):  
Yu Qiang Chen ◽  
Jiang Wei Lv ◽  
Hong Wei Jiang ◽  
Hong Yan Peng ◽  
Yu Jie Feng ◽  
...  

A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn’t damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.


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