Influence of Carbon Source Concentration on Characterization of Boron-Doped Diamond Electrodes

2011 ◽  
Vol 204-210 ◽  
pp. 1691-1696
Author(s):  
Yu Qiang Chen ◽  
Jiang Wei Lv ◽  
Hong Wei Jiang ◽  
Hong Yan Peng ◽  
Yu Jie Feng ◽  
...  
Keyword(s):  
Carbon Source ◽  
Phenol Degradation ◽  
Chemical Vapor ◽  
Crystalline Lattice ◽  
Boron Doped Diamond ◽  
Graphite Phase ◽  
Substitutional Site ◽  
Boron Doped ◽  
Source Concentration

A set of boron-doped diamond (BDD) electrodes were deposited on silicon substrates by direct current plasma chemical vapor deposition (DC-PCVD) system using different carbon source concentrations. The influence of carbon source concentration on characterization of BDD electrodes was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and phenol degradation. It was found that BDD films with different carbon source concentrations were polycrystalline films with (111) dominant orientation. The films grew well when carbon source concentration was less than 2.5%, while graphite phase began to form when carbon source concentration was increased to 3%. Boron atoms were located at the substitutional site or interstitial sites in the crystalline lattice of diamond films, and didn’t damage the structure of diamond crystal. Within 4 h, 100 mg/L phenol solution in 80 ml could be oxidized by all the electrodes with removal efficiency higher than 90%.

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Comparison of electrocatalytic characterization of boron-doped diamond and SnO2 electrodes

2013 ◽  
Vol 283 ◽  
pp. 900-905 ◽  
Author(s):  
Jiangwei Lv ◽  
Yujie Feng ◽  
Junfeng Liu ◽  
Youpeng Qu ◽  
Fuyi Cui
Keyword(s):  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals AFM studies and electrochemical characterization of boron-doped diamond surfaces modified with metal oxides by the Sol-Gel method

2006 ◽  
Vol 17 (2) ◽  
pp. 257-264 ◽  
Author(s):  
Hugo B. Suffredini ◽  
Giancarlo R. Salazar-Banda ◽  
Sônia T. Tanimoto ◽  
Marcelo L. Calegaro ◽  
Sergio A. S. Machado ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Sol Gel ◽  
Electrochemical Characterization ◽  
Boron Doped Diamond ◽  
Diamond Surfaces ◽  
Gel Method ◽  
Sol Gel Method ◽  
Boron Doped

Characterization of Boron-Doped Diamond Film

1989 ◽  
Vol 28 (Part 1, No. 6) ◽  
pp. 1066-1071 ◽  
Author(s):  
Ken Okano ◽  
Hidetoshi Naruki ◽  
Yukio Akiba ◽  
Tateki Kurosu ◽  
Masamori Iida ◽  
...  
Keyword(s):  
Diamond Film ◽  
Boron Doped Diamond ◽  
Boron Doped

MEMS Microresonators Based on Nanocrystalline Silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
J. Gaspar ◽  
T. Adrega ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Energy Dissipation ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Quality Factors ◽  
Electrostatically Actuated ◽  
Glass Substrates ◽  
Boron Doped ◽  
Resonance Frequencies ◽  
Geometrical Dimensions

ABSTRACTThis paper describes the fabrication and characterization of thin-film nanocrystalline silicon microresonators processed at temperatures below 110°C on glass substrates. The microelectromechanical structures consist of surface micromachined bridges of boron-doped hydrogenated nanocrystalline silicon (p+-nc-Si:H) deposited at 100°C by hot-wire chemical vapor deposition (HWCVD). The microbridges, which are suspended over an Al gate electrode, are electrostatically actuated and the mechanical resonance is detected in vacuum using an optical setup. The resonance frequency and energy dissipation in p+-nc-Si:H based resonators are studied as a function of the geometrical dimensions of the microstructures. Resonance frequencies between 700 kHz and 36 MHz and quality factors as high as 2000 are observed. A Young's modulus of 160 GPa for the structural bridge film is extracted from the experimental data using an electromechanical model and the main intrinsic energy dissipation mechanisms in nc-Si:H microresonators are discussed.

STM Study of Diamond(001) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Takashi Tsuno ◽  
Takahiro Imai ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
Methane Concentration ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Partially Observed ◽  
Type Reconstruction ◽  
B Doping

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

Sign in / Sign up

Export Citation Format

Share Document