High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

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Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

Applied Physics Express ◽

10.1143/apex.1.035003 ◽

2008 ◽

Vol 1 ◽

pp. 035003 ◽

Cited By ~ 11

Author(s):

Pierre Muret ◽

Julien Pernot ◽

Tokuyuki Teraji ◽

Toshimichi Ito

Keyword(s):

Surface Defects ◽

Schottky Diodes ◽

Boron Doped Diamond ◽

Near Surface ◽

Boron Doped

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High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

IEEE Electron Device Letters ◽

10.1109/edl.1987.26653 ◽

1987 ◽

Vol 8 (8) ◽

pp. 341-343 ◽

Cited By ~ 184

Author(s):

M.W. Geis ◽

D.D. Rathman ◽

D.J. Ehrlich ◽

R.A. Murphy ◽

W.T. Lindley

Keyword(s):

High Temperature ◽

Schottky Diodes ◽

Point Contact ◽

Boron Doped Diamond ◽

Boron Doped

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Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

MRS Proceedings ◽

10.1557/proc-242-161 ◽

1992 ◽

Vol 242 ◽

Author(s):

J.W. Glesener ◽

A.A. Morrish ◽

K.A. Snail

Keyword(s):

Electrical Properties ◽

Ohmic Contact ◽

Ideality Factor ◽

Schottky Diodes ◽

Turbulent Flame ◽

Boron Doped Diamond ◽

Acceptor Concentration ◽

Boron Doped ◽

Current Voltage ◽

Capacitance Voltage

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

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Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices

MRS Proceedings ◽

10.1557/proc-423-63 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 3

Author(s):

S. D. Wolter ◽

T. H. Borst ◽

P. Gluche ◽

W. Ebert ◽

A. Vescan ◽

...

Keyword(s):

Substrate Temperature ◽

Schottky Diodes ◽

Electronic Devices ◽

Diamond Films ◽

Silicon Substrates ◽

Substrate Holder ◽

Boron Doped Diamond ◽

Boron Doped ◽

First Time ◽

Graphite Susceptor

AbstractA new bias-enhanced nucleation method based on an AC-bias step to form highly oriented diamond (HOD) nuclei on silicon substrates is presented. The uniformity of the nucleated film and the bias time strongly depended on the substrate temperature and the substrate holder. In our case the shortest bias time and highest nucleation densities were achieved at ∼ 850°C while using a graphite susceptor. Following this nucleation enhancement step the diamond films were grown out using conditions employing an α-parameter slightly greater than 2. This ultimately leads to extremely smooth and well-faceted (100) textured HOD films which could be used as substrates for the fabrication of electronic devices.Schottky diodes with high rectification ratios and high breakdown voltages have been fabricated for the first time via selective growth of the active boron doped diamond layers on these HOD films. Results of the growth procedure and diode performance will be given.

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