Electrical Properties of Amorphous Si-P/P-Type Si Schottky Barrier Contact

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

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Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

MRS Proceedings ◽

10.1557/proc-181-3 ◽

1990 ◽

Vol 181 ◽

Cited By ~ 5

Author(s):

M.O. Aboelfotoh

Keyword(s):

Electrical Properties ◽

Temperature Dependence ◽

Schottky Barrier ◽

Barrier Height ◽

Fermi Level Pinning ◽

Barrier Heights ◽

Semiconductor Interfaces ◽

Barrier Formation ◽

Indirect Band Gap ◽

P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

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Electrical Properties of AuZnCr Multilayer Metallizations to InP

MRS Proceedings ◽

10.1557/proc-337-363 ◽

1994 ◽

Vol 337 ◽

Cited By ~ 2

Author(s):

Thomas clausen ◽

Otto leistiko

Keyword(s):

Electrical Properties ◽

Schottky Barrier ◽

Limiting Factor ◽

Barrier Heights ◽

High Annealing ◽

P Type ◽

Multilayer Metallization ◽

Semiconductor Contact ◽

Range Of Values ◽

Quality Metal

ABSTRACTThe electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.

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A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

MRS Proceedings ◽

10.1557/proc-77-375 ◽

1986 ◽

Vol 77 ◽

Author(s):

T. Ogino ◽

M. Sakaue ◽

Y. Amemiya

Keyword(s):

Solid Solution ◽

Schottky Barrier ◽

Barrier Height ◽

Conduction Mechanism ◽

Schottky Contact ◽

Variable Range Hopping ◽

Dominant Conduction Mechanism ◽

Amorphous Si ◽

P Type ◽

Solid Solution Film

ABSTRACTA high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.

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Amorphous Si/sub 1-x/Ge/sub x//p-type-Si Schottky barrier infrared photon detector

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) ◽

10.1109/iccdcs.2002.1004058 ◽

2003 ◽

Author(s):

R. Salazar ◽

A.T. Jacome

Keyword(s):

Schottky Barrier ◽

Photon Detector ◽

Infrared Photon ◽

Amorphous Si ◽

P Type

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The Effect of Hydrogen Treatment on Electrical Properties of AIGaAsSb

MRS Proceedings ◽

10.1557/proc-262-425 ◽

1992 ◽

Vol 262 ◽

Author(s):

A. Y. Polyakov ◽

M. Stam ◽

A. G. Milnes ◽

R. G. Wilson ◽

A. E. Bochkarev ◽

...

Keyword(s):

Electrical Properties ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Hydrogen Treatment ◽

Spreading Resistance ◽

Different Types ◽

Hydrogen Deuterium ◽

P Type

ABSTRACTThe effect of hydrogen treatment at 200°C on the concentration of electrically active defects in LPE grown AIGaAsSb is reported. In n-type layers the electrical properties are shown to be dominated by DX-like deep donors of three different types all of which are strongly passivated by the hydrogen treatment as evidenced by C-V. DLTS C-T and spreading resistance measurements. In p-type layers intrinsic acceptors of defect origin are also passivated by hydrogen. Deuterium profiles in both n- and p-type layers show characteristic plateaus indicative of formation of neutral compexes between hydrogen and dopants. Hydrogen treatment also leads to decrease of the Au/n-AIGaAsSb Schottky barrier height from 1.3 to 0.85 eV.

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