Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride.

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet ◽  
Th. Kehagias ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Film Thickness ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Epitaxial Relationship ◽  
Si Doped ◽  
P Type ◽  
20 Nm

AbstractWhen the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

2019 ◽  
Vol 963 ◽  
pp. 490-493
Author(s):  
Tomasz Sledziewski ◽  
Tobias Erlbacher ◽  
Anton Bauer ◽  
Lothar Frey ◽  
Xi Ming Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Ohmic Contacts ◽  
Positive Impact ◽  
Specific Resistance ◽  
Power Mosfet ◽  
Interlayer Dielectric ◽  
Lift Off ◽  
P Type

A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500 °C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal.

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 825-828
Author(s):  
Alessia Frazzetto ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
R. Lo Nigro ◽  
M. Saggio ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Electrical Parameters ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Specific Contact ◽  
Activation Annealing ◽  
P Type ◽  
Post Implantation

This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs.

scholarly journals Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 639-642
Author(s):  
Duy Minh Nguyen ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Heu Vang ◽  
Dominique Planson
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Carrier Mobility ◽  
Ohmic Contacts ◽  
Series Resistance ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
P Type ◽  
Post Implantation

N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followed by a post-implantation annealing with or without a graphite capping layer. Ohmic contacts were formed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears that capping the sample during the annealing reduces considerably the surface roughness and the specific contact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively 1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature have been performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can be explained by the freeze-out of carriers and by the variation of carrier mobility.

Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p‐type ZnTe

1995 ◽  
Vol 67 (1) ◽  
pp. 112-114 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Akihisa Terano ◽  
Masayuki Momose ◽  
Akira Taike ◽  
Masahiko Kawata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

2004 ◽  
Vol 48 (9) ◽  
pp. 1563-1568 ◽  
Author(s):  
V Rajagopal Reddy ◽  
Sang-Ho Kim ◽  
June-O Song ◽  
Tae-Yeon Seong
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Thermally Stable ◽  
P Type

Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN

1999 ◽  
Vol 75 (26) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Maeda ◽  
Yasuo Koide ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Characterization of the Interface Between Metal Contacts and Epilayers of Doped Silicon Carbide

1995 ◽  
Vol 405 ◽  
Author(s):  
M. A. George ◽  
D. J. Larkin ◽  
J. Petit ◽  
A. Burger ◽  
S. H. Morgan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Metal Contacts ◽  
Aluminum Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemical Vapor Deposited ◽  
Before And After ◽  
P Type

AbstractAluminum contacts on chemical vapor deposited (CVD) SiC films were studied to examine variations in the chemical, morphological and electrical properties of the samples. Nitrogen and aluminum doped substrates were prepared to give n-type and p-type SiC epilayers respectively. These preparations were examined by surface sensitive spectroscopies and by atomic force microscopy (AFM). Samples were studied both before and after the deposition of aluminum films to compare differences between SiC(p++)/metal and SiC(n++)/metal contact interfacial properties. Aluminum has generally been found to have good adherence to the n+ epilayer but do not form good ohmic contacts, while metal films deposited on p+ epilayers have had poor adherence but have been found to provide better ohmic character. AFM images revealed nanometer sized clusters, attributed to excess Si on the n+ epilayers, while no clusters were observed on the p+ epilayers. XPS studies of the as-prepared samples indicated that the n+ epilayers had higher concentrations of oxides which may enhance adhesion. The chemical composition and morphology is discussed and correlated to the electrical properties obtained for the various samples.

scholarly journals The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride.

2000 ◽  
Vol 5 (S1) ◽  
pp. 887-893
Author(s):  
P. Ruterana ◽  
G. Nouet ◽  
Th. Kehagias ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Film Thickness ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Epitaxial Relationship ◽  
Si Doped ◽  
P Type ◽  
20 Nm

When the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC

2004 ◽  
Vol 96 (9) ◽  
pp. 4976-4981 ◽  
Author(s):  
S. Tsukimoto ◽  
T. Sakai ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type
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