Silver Metallization Characterization and Resistivity Performance Potential toward Chemical Sensor Application

Performance of limiting resistive and capacitive signal delays increases gradually depends on the complexity degree of multilayer metallization. Electrodes sensor for electrical applications requires low surface roughness and low resistivity metal layers. Amongst conductive metal series, silver (Ag) has the lowest resistivity. On the other hand, compared to aluminum and copper, this metal also has higher oxidation resistance. This study aims to characterize Ag thin film on the glass substrate and the resistivity performance by using a physical deposition technique for chemical sensor application. A series of Ag thin film with different thickness were prepared from thermal vacuum evaporator at 3.45 x 10-5 Pa with applied current at 28 Ampere in 21 minutes. Four-point resistivity probing instrument was used for resistivity testing of the thin films with different thickness. The prepared Ag thin film shows a low average roughness at 1.89 nm. A smooth and homogeneous of Ag thin film is an advantage to provide a sensitive surface for element recognition in the development of chemical sensor and an adsorbate can be justified whereas it schematically assembled with the arrangement onto smooth and perfectly flat thin film surface. Ag thin film has shown a crystallite size with respect to 50.84 nm. The low rough surfaces have fewer nucleation sites, therefore fewer grains (crystallites) will appear. The optimum thickness was determined at 107 nm and the resistivity of Ag thin film was an average at 1.988 x10-8 Ohm m.

RDL Multilayer Metallization Approaches for TGV

Significant advances have been accomplished in the field of Through Glass Via (TGV) technology; enabling a new generation of electronic designs that achieve higher performance, while leveraging low cost system solutions. Through-hole creation methods in glass have been optimized for mass production with consistent via diameter, shape and wall chemistry/morphology. This has enabled the development of unique copper via metallization materials that exhibit very high conductivity, thermal expansion matching and hermeticity. This paper will discuss post via metallization processes for multilayer RDL (Redistribution Layer) metallization on both sides of the glass wafer. Unique Chemical Mechanical Polishing (CMP) development approaches for glass wafers with copper thick film vias will be explained. Thin film deposited adhesion layer on glass, followed by a deposited metallization layer will be described. Types of deposited adhesion layer on glass for optimized adhesion and electrical contact with the vias will be examined. Furthermore, copper plating approaches for higher conductivity and fine line circuit patterning are examined. Polymeric dielectric material systems for multilayer RDL on both sides of the glass will also be reviewed.

Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

Characterization of Multilayered Structures Using a FEGSEM and X-Ray Microanalysis

Microelectronic processes now involve multilayer structures of different materials. It is important to control accurately the thickness and composition of these materials during their processing. The determination of these two physical parameters are usually performed by Elastic Recoil Detection (ERD), by Auger Electron Spectroscopy (AES) and Transmission Electron Microscopy (TEM). However, these techniques are not suitable for analysis on a routine basis. In this context, a quantitative procedure based on EDS X-ray microanalysis in the Scanning Electron Microscope has been developped because of its availability and its speed of analysis. However, this technique requires several measurement of K ratio taken at different voltages which is time consuming. With the advent of Field Emission Gun Scanning Electron Microscopes (FEGSEM), X-ray line scans taken at low electron beam voltage with an EDS system may be an alternative. In this paper, preliminary results using this technique on multilayered materials are presented.To investigate this characterization technique, a AlSiCu(200 nm)/TiN(95 nm)/Ti(40 nm) multilayer metallization structure deposited on Si substrate was used. EDS X-ray line scans were obtained with a Hitachi S-4500 FEGSEM coupled with a Link ISIS 300 EDS system.