Electrical Properties of AuZnCr Multilayer Metallizations to InP
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P Type
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ABSTRACTThe electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.
1997 ◽
Vol 14
(6)
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pp. 460-463
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2015 ◽
Vol 17
(41)
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pp. 27636-27641
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2008 ◽
Vol 22
(14)
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pp. 2309-2319
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1991 ◽
Vol 30
(Part 1, No. 8)
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pp. 1585-1590
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