A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate

Ferroelectricity can be induced in fluorite-structured oxides such as HfO2 and ZrO2, a feature of increasing interest in both academia and industry. Initially, most research focused on solid solution films, but recently, it has been suggested that nanolaminates with independent HfO2 and ZrO2 layers may show electrical and physical properties superior to those of solid solution samples. It was reported that the nanolaminate samples could have remanent polarization higher than that of solid solution film or a wider composition window for robust ferroelectricity compared to the solid solution films. In this review, the existing literature on fluorite-structured nanolaminates is comprehensively reviewed.

Piezoelectric Ba and Ti co-doped BiFeO3 textured films: selective growth of solid solutions or nanocomposites

Accurate control of the MOCVD process parameters results selectively and reproducibly in the formation of two different systems: a single-phase solid solution film and a nanocomposite sample formed by nanocolumns embedded in a solid solution film.

A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

ABSTRACTA high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.