The Effect of Hydrogen Treatment on Electrical Properties of AIGaAsSb

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Y. Polyakov ◽  
M. Stam ◽  
A. G. Milnes ◽  
R. G. Wilson ◽  
A. E. Bochkarev ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Hydrogen Treatment ◽  
Spreading Resistance ◽  
Different Types ◽  
Hydrogen Deuterium ◽  
P Type

ABSTRACTThe effect of hydrogen treatment at 200°C on the concentration of electrically active defects in LPE grown AIGaAsSb is reported. In n-type layers the electrical properties are shown to be dominated by DX-like deep donors of three different types all of which are strongly passivated by the hydrogen treatment as evidenced by C-V. DLTS C-T and spreading resistance measurements. In p-type layers intrinsic acceptors of defect origin are also passivated by hydrogen. Deuterium profiles in both n- and p-type layers show characteristic plateaus indicative of formation of neutral compexes between hydrogen and dopants. Hydrogen treatment also leads to decrease of the Au/n-AIGaAsSb Schottky barrier height from 1.3 to 0.85 eV.

Schottky Barrier Height andS-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

2012 ◽  
Vol 51 (9S2) ◽  
pp. 09MK01 ◽  
Author(s):  
Youngjun Park ◽  
Kwang-Soon Ahn ◽  
Hyunsoo Kim
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
P Type

scholarly journals Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1674 ◽  
Author(s):  
Xuefei Liu ◽  
Zhaofu Zhang ◽  
Zijiang Luo ◽  
Bing Lv ◽  
Zhao Ding
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Tensile Strain ◽  
Schottky Barrier Height ◽  
Strain Engineering ◽  
Nitrogen Vacancy ◽  
First Principles Calculation ◽  
Type Contact ◽  
P Type

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

Electronic transport and Schottky barrier height of Ni contact on p-type GaN

2008 ◽  
Vol 41 (9) ◽  
pp. 095107 ◽  
Author(s):  
Yow-Jon Lin ◽  
Ching-Ting Lee ◽  
Shih-Sheng Chang ◽  
Hsing-Cheng Chang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electronic Transport ◽  
Schottky Barrier Height ◽  
P Type

Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 923-926 ◽  
Author(s):  
Masataka Satoh ◽  
H. Matsuo
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Crystal Orientation ◽  
Schottky Barrier Height ◽  
Donor Concentration ◽  
Metal Contacts ◽  
Acceptor Concentration ◽  
Small Change ◽  
P Type

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

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