A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

ABSTRACTA high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.

Download Full-text

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

Nanomaterials ◽

10.3390/nano10091794 ◽

2020 ◽

Vol 10 (9) ◽

pp. 1794

Author(s):

Xuefei Liu ◽

Zhaocai Zhang ◽

Bing Lv ◽

Zhao Ding ◽

Zijiang Luo

Keyword(s):

Electric Field ◽

Schottky Barrier ◽

External Electric Field ◽

Barrier Height ◽

Density Functional ◽

Schottky Barrier Height ◽

Schottky Contact ◽

Valence Band Maximum ◽

Charge Analysis ◽

P Type

Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, we investigated the electronic structure and interfacial characteristics of the graphene/AlN interface based on density functional theory. The results show that the intrinsic electronic properties of graphene changed slightly after contact. In contrast, the valence band maximum of AlN changed significantly due to the hybridization of Cp and Np orbital electrons. The Bader charge analysis showed that the electrons would transfer from AlN to graphene, implying that graphene would induce acceptor states. Additionally, the Schottky contact nature can be effectively tuned by the external electric field, and it will be tuned from the p-type into n-type once the electric field is larger than about 0.5 V/Å. Furthermore, the optical absorption of graphene/AlN is enhanced after contact. Our findings imply that the SBH is controllable, which is highly desirable in nano-electronic devices.

Download Full-text

Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20–21) n-type GaN

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.157003 ◽

2021 ◽

Vol 852 ◽

pp. 157003

Author(s):

Jung-Suk Cha ◽

Tae-Ju Lee ◽

Tae-Yeon Seong

Keyword(s):

Solid Solution ◽

Barrier Height ◽

Schottky Contact ◽

Solid Solution Layer ◽

Solution Layer

Download Full-text

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals ◽

10.3390/cryst10080636 ◽

2020 ◽

Vol 10 (8) ◽

pp. 636

Author(s):

Mehadi Hasan Ziko ◽

Ants Koel ◽

Toomas Rang ◽

Muhammad Haroon Rashid

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Ideality Factor ◽

Doping Profile ◽

Structural Defects ◽

Diffusion Welding ◽

Native Oxide Layer ◽

Electrical Characteristics ◽

Discrete Energy Level ◽

P Type

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

Download Full-text

Schottky Barrier Height and $S$-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.09mk01 ◽

2012 ◽

Vol 51 ◽

pp. 09MK01 ◽

Cited By ~ 2

Author(s):

Youngjun Park ◽

Kwang-Soon Ahn ◽

Hyunsoo Kim

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

S Parameter ◽

P Type

Download Full-text

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.1142 ◽

2014 ◽

Vol 778-780 ◽

pp. 1142-1145 ◽

Cited By ~ 5

Author(s):

Filippo Giannazzo ◽

Stefan Hertel ◽

Andreas Albert ◽

Antonino La Magna ◽

Fabrizio Roccaforte ◽

...

Keyword(s):

Silicon Carbide ◽

Schottky Barrier ◽

Barrier Height ◽

Photoelectron Spectroscopy ◽

Schottky Contact ◽

Epitaxial Graphene ◽

Schottky Contacts ◽

Specific Contact Resistance ◽

Monolayer Graphene ◽

Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

Download Full-text

Schottky Barrier Height andS-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.09mk01 ◽

2012 ◽

Vol 51 (9S2) ◽

pp. 09MK01 ◽

Cited By ~ 5

Author(s):

Youngjun Park ◽

Kwang-Soon Ahn ◽

Hyunsoo Kim

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

P Type

Download Full-text

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

International Journal of Modern Physics B ◽

10.1142/s0217979208039496 ◽

2008 ◽

Vol 22 (14) ◽

pp. 2309-2319 ◽

Cited By ~ 1

Author(s):

K. ERTURK ◽

M. C. HACIISMAILOGLU ◽

Y. BEKTORE ◽

M. AHMETOGLU

Keyword(s):

Temperature Dependence ◽

Schottky Barrier ◽

Barrier Height ◽

Thermionic Emission ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Semiconductor Interface ◽

Linear Portion ◽

Barrier Heights ◽

P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Download Full-text

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

MRS Proceedings ◽

10.1557/proc-0913-d01-07 ◽

2006 ◽

Vol 913 ◽

Cited By ~ 1

Author(s):

Joachim Knoch ◽

Min Zhang ◽

Qing-Tai Zhao ◽

Siegfried Mantl

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Field Effect Transistors ◽

Interface Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Dopant Segregation ◽

P Type ◽

Silicon Interface

AbstractIn this paper we demonstrate the use of dopant segregation during silicidation for decreasing the effective potential barrier height in Schottky-barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs). N-type as well as p-type devices are fabricated with arsenic/boron implanted into the device's source and drain regions prior to silicidation. During full nickel silicidation a highly doped interface layer is created due to dopants segregating at the silicide-silicon interface. This doped layer leads to an increased tunneling probability through the Schottky barrier and hence leads to significantly improved device characteristics. In addition, we show with simulations that employing ultrathin body (UTB) silicon-on-insulator and ultrathin gate oxides allows to further improve the device characteristics.

Download Full-text