Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Photovoltaic effect and Schottky barriers in the Au–In1−xGaxSb system

1980 ◽  
Vol 58 (1) ◽  
pp. 63-67 ◽  
Author(s):  
W. J. Keeler ◽  
A. P. Roth ◽  
E. Fortin
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
System Analysis ◽  
Photovoltaic Effect ◽  
Alloy System ◽  
Schottky Barriers ◽  
Type Region ◽  
Barrier Heights ◽  
P Type

The temperature dependence of the photovoltaic effect between 6 and 300 K has been measured on the Au–In1−xGaxSb system. Analysis of the data gives the Schottky barrier heights across the alloy system. In the n-type region of the system (InSb rich) the barrier is found to be [Formula: see text] while in the p-type region (GaSb rich) it is [Formula: see text].

Electrical Properties of AuZnCr Multilayer Metallizations to InP

1994 ◽  
Vol 337 ◽  
Author(s):  
Thomas clausen ◽  
Otto leistiko
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Limiting Factor ◽  
Barrier Heights ◽  
High Annealing ◽  
P Type ◽  
Multilayer Metallization ◽  
Semiconductor Contact ◽  
Range Of Values ◽  
Quality Metal

ABSTRACTThe electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.

Electrical Study of Metal/Gaas Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
N. Newman ◽  
W.E. Spicer ◽  
E.R. Weber ◽  
Z. Liliental-Weber
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrical Measurements ◽  
Barrier Formation ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
P Type ◽  
Induced Changes ◽  
Electrical Study

We have carried out a systematic study of the electrical properties of Schottky barriers formed on atomically-clean and contaminated n-type and p-type GaAs surfaces[1-11]. Diodes were fabricated by in-situ deposition on clean GaAs (110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere[1-4]. The consistent and reproducible barrier height determinations from the electrical measurements of unannealed and annealed diodes, when combined with results of transmission electron microscopy (TEM)[5,6] and surface sensitive studies on identically prepared samples[7,8], are found to be a particularly critical test of models of Schottky barrier formation. A strong correlation between annealing-induced changes in the Schottky barrier height and the stoichiometry of the near interfacial GaAs is found.

Schottky Barrier Heights of PT Silicides on SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
J.R. Jimenez ◽  
X. Xiao ◽  
J.C. Sturm ◽  
P.W. Pellegrini ◽  
M. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Infrared Detector ◽  
Schottky Barriers ◽  
Band Offset ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Metal Thickness ◽  
Deposited Metal

ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

Schottky Barrier and Electronic States at Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
P. E. Schmid ◽  
M. Liehr ◽  
F. K. Legoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interface States ◽  
Impurity Incorporation ◽  
Defect States ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Interfacial Defect ◽  
Consistent Picture ◽  
Chemical Correlation

ABSTRACTThis paper reviews the recent studies on Schottky barrier and interface states at silicide-silicon interfaces, with emphasis placed on the results obtained from the epitaxial Ni suicides. A model based on interfacial defect states has been proposed to account for the overall chemical correlation between the barrier height and the metal electronegativity. Measurements on the barrier heights of type A, B and C epitaxial Ni suicides show that these three interfaces can be formed with high degrees of perfection to yield a barrier of 0.78 eV. Similar interfaces formed under less ideal conditions or with impurity incorporation decrease the barrier to 0.66 eV. The density and distribution of the interface states measured by a capacitance spectroscopy method correlate well with the structural perfection of the single and mixed-phase interfaces. A consistent picture seems to have emerged suggesting that the barrier height at silicide-Si interfaces is formed as a result of Fermi level pinning by interfacial defect states which are controlled primarily by the degree of perfection of the interface instead of the specific epitaxy.

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