Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition

1991 ◽  
Vol 30 (Part 2, No. 1A) ◽  
pp. L7-L10 ◽  
Author(s):  
Masato Hiramatsu ◽  
Takaaki Kamimura ◽  
Mitsuo Nakajima ◽  
Hiroshi Ito
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Nitrogen Incorporation ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous

Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Sakuma ◽  
H. Nozaki ◽  
T. Niiyama ◽  
H. Ito
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Other ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp

1986 ◽  
Vol 48 (20) ◽  
pp. 1380-1382 ◽  
Author(s):  
Ken Kumata ◽  
Uichi Itoh ◽  
Yasutake Toyoshima ◽  
Naoki Tanaka ◽  
Hiroyuki Anzai ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Low Pressure ◽  
Silicon Films ◽  
Mercury Lamp ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous

Hg-Sensitized Photochemical Vapor Deposition Application to Hydrogenated Amorphous Silicon Photoconversion Layer Overlaid on Charge Coupled Device

1995 ◽  
Vol 34 (Part 1, No. 5A) ◽  
pp. 2223-2228 ◽  
Author(s):  
Hidetoshi Nozaki ◽  
Naoshi Sakuma ◽  
Takako Niiyama ◽  
Hisanori Ihara ◽  
Yoshiki Ishizuka ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Coupled Device ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous
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