Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition
Keyword(s):
ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.
1991 ◽
Vol 30
(Part 2, No. 1A)
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pp. L7-L10
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1986 ◽
Vol 25
(Part 1, No. 12)
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pp. 1778-1782
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1999 ◽
Vol 17
(6)
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pp. 3240-3245
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1993 ◽
Vol 32
(Part 2, No. 12B)
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pp. L1781-L1783
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