Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Sakuma ◽  
H. Nozaki ◽  
T. Niiyama ◽  
H. Ito

ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

1986 ◽  
Vol 48 (20) ◽  
pp. 1380-1382 ◽  
Author(s):  
Ken Kumata ◽  
Uichi Itoh ◽  
Yasutake Toyoshima ◽  
Naoki Tanaka ◽  
Hiroyuki Anzai ◽  
...  

1991 ◽  
Vol 58 (23) ◽  
pp. 2669-2671 ◽  
Author(s):  
W. A. Nevin ◽  
H. Yamagishi ◽  
M. Yamaguchi ◽  
Y. Tawada

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