Interference-Free Determination of the Absorption Coefficient of Amorphous Silicon Thin Films

1992 ◽  
Vol 31 (Part 1, No. 3) ◽  
pp. 768-769 ◽  
Author(s):  
N. Maley
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 1008-1014 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Noboru Nakamura ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
Yasuo Kishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Amorphous Silicon ◽  
Optical Absorption Coefficient ◽  
Optical Gap ◽  
Silicon Thin Films

Quantitative photopyroelectric out-of-phase spectroscopy of amorphous silicon thin films deposited on crystalline silicon

1991 ◽  
Vol 69 (3-4) ◽  
pp. 317-323 ◽  
Author(s):  
Constantinos Christofides ◽  
Andreas Mandelis ◽  
Albert Engel ◽  
Michel Bisson ◽  
Gord Harling
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Coefficient ◽  
Dynamic Range ◽  
Crystalline Silicon ◽  
Optical Absorption Coefficient ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Background Compensation

A photopyroelectric spectrometer with real-time and(or) self-normalization capability was used for both conventional transmission and thermal-wave spectroscopic measurements of amorphous Si thin films, deposited on crystalline Si substrates. Optical-absorption-coefficient spectra were obtained from these measurements and the superior dynamic range of the out-of-phase (quadrature) photopyroelectric signal was established as the preferred measurement method, owing to its zero-background compensation capability. An extension of a photopyroelectric theoretical model was established and successfully tested in the determination of the optical absorption coefficient and the thermal diffusivity of the sample under investigation. Instrumental sensitivity limits of βt ≈ 5 × 10−3 were demonstrated.

A New General Method for the Determination of Optical Properties of Amorphous Silicon Films

1990 ◽  
Vol 192 ◽  
Author(s):  
G. Amato ◽  
L. Boarino ◽  
F. Fizzotti ◽  
C. Manfredotti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Optical Response ◽  
The Other ◽  
New Method ◽  
Silicon Thin Films ◽  
Physical Insight ◽  
General Method

ABSTRACTWe propose to apply a new method to model the optical response of amorphous silicon thin films. This method presents the advantage of having a good physical insight. On the other hand, although the model has been originally tested on different materials like a-Si, a-Ge and a-GaAs, we show that it is also sensitive to small differences like those that can exist between intrinsic and doped a-Si:H.

Determination of the optical constants of solar-control amorphous silicon thin films on float glass

2009 ◽  
Vol 41 (7) ◽  
pp. 573-576
Author(s):  
Yong Liu ◽  
Lihong Ni ◽  
Jun Bo Liu ◽  
Qiying Liu ◽  
Chenlu Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Optical Constants ◽  
Float Glass ◽  
Silicon Thin Films ◽  
Solar Control

Determination of Optical Constants of Rough Hydrogenated Amorphous Silicon Thin Films

2013 ◽  
Vol 33 (3) ◽  
pp. 0331001
Author(s):  
丁文革 Ding Wenge ◽  
卢云霞 Lu Yunxia ◽  
马登浩 Ma Denghao ◽  
苑静 Yuan Jing ◽  
侯玉斌 Hou Yubin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Optical Constants ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters

Irradiation Effect on Al-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Raman Spectroscopy ◽  
Irradiation Effect ◽  
Amorphous Thin Films ◽  
Laser Raman ◽  
Silicon Thin Films ◽  
Al Nanoparticles ◽  
Spot Area ◽  
Fs Laser

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

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