Cross-Sectional Transmission Electron Microscopy Observations and Selected-Area Electron Diffractions of Interfaces of Epitaxially Grown Diamond Thin Films on Cubic Boron Nitride Substrates

1993 ◽  
Vol 32 (Part 1, No. 9A) ◽  
pp. 3938-3942 ◽  
Author(s):  
Tadashi Tomikawa ◽  
Shin-ichi Shikata
1993 ◽  
Vol 8 (11) ◽  
pp. 2933-2941 ◽  
Author(s):  
S.D. Walek ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse

Molybdenum disulfide is a technologically important solid phase lubricant for vacuum and aerospace applications. Pulsed laser deposition of MoS2 is a novel method for producing fully dense, stoichiometric thin films and is a promising technique for controlling the crystallographic orientation of the films. Transmission electron microscopy (TEM) of self-supporting thin films and cross-sectional TEM samples was used to study the crystallography and microstructure of pulsed laser deposited films of MoS2. Films deposited at room temperature were found to be amorphous. Films deposited at 300 °C were nanocrystalline and had the basal planes oriented predominately parallel to the substrate within the first 12–15 nm of the substrate with an abrupt upturn into a perpendicular (edge) orientation farther from the substrate. Spherically shaped particles incorporated in the films from the PLD process were found to be single crystalline, randomly oriented, and less than about 0.1 μm in diameter. A few of these particles, observed in cross section, had flattened bottoms, indicating that they were molten when they arrived at the surface of the growing film. Analytical electron microscopy (AEM) was used to study the chemistry of the films. The x-ray microanalysis results showed that the films have the stoichiometry of cleaved single crystal MoS2 standards.


1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.


Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.


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