Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Microcrystalline Cubic Boron Nitride/Amorphous Hydrogenated Boron Nitride Mixed Phase Thin Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Shu-Han Lin ◽  
Bernard J. Feldman
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Mixed Phase ◽  
Good Adhesion ◽  
Transmission Electron ◽  
Plasma Decomposition ◽  
Absorption Measurements

ABSTRACTTransparent and insulating thin films have been grown by the plasma decomposition of B2H6, NH3, and H2, at a substrate temperature of 250°C. From chemical composition, transmission electron microscopy, infrared absorption, and optical absorption measurements, the thin films are determined to be a mixed phase of crystalline cubic boron nitride and amorphous hydrogenated boron nitride. Also, the films have significantly more boron than nitrogen, a large concentration of hydrogen, a very large bandgap, strong infrared aborption due to both hexagonal boron nitride and boron icosahedra, and good adhesion to various substrates.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Cross-sectional transmission electron microscopy observations of c-BN films deposited on Si by ion-beam-assisted deposition

1994 ◽  
Vol 253 (1-2) ◽  
pp. 72-77 ◽  
Author(s):  
H. Yamashita ◽  
K. Kuroda ◽  
H. Saka ◽  
N. Yamashita ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Cross Sectional ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron

Electrothinning of nickel thick films for characterization by TEM with the aid of a conducting polymer film

1990 ◽  
Vol 48 (4) ◽  
pp. 856-857
Author(s):  
Ngee-Sing Chong ◽  
Michael L. Norton
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Electrical Contact ◽  
Beam Angle ◽  
Ion Milling ◽  
Ion Energy ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Special Expertise ◽  
Thinning Rate

Existing techniques for the preparation of metallic specimens for examination by transmission electron microscopy consist primarily of jet electrolysis or ion milling. Both of these procedures are well-established and are suitable for thinning metallic specimens of interests from a thickness of 0.1 mm to 30-100 nm. Despite its popularity, the former technique may not be suitable for thinning electrodeposited films of 1-5 um thick because of its rather rapid thinning rate of 0.5-1.0 um/sec. Furthermore, it is difficult to ensure good electrical contact between such a delicate film and the specimen holder. Hence, the older method of “window” electropolishing may be applicable owing to its slower thinning rate despite the troublesome steps of lacquering specimen edges, finding suitable polishing conditions, and making electrical attachment. Ion milling, despite its relatively high cost, may be suitable for thinning the nickel films because of its slow milling rates on the order of 110 um/hr. However, special expertise is required in the manipulation of milling conditions such as ion energy and incident ion beam angle to avoid creating the structural artifacts of ion implantation, atom translocation, and bubbling.

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

2014 ◽  
Vol 104 (9) ◽  
pp. 092113 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshitaka Taniyasu ◽  
Shin-ichi Karimoto ◽  
Yoshiharu Krockenberger ◽  
Hideki Yamamoto
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ion Beam ◽  
Cubic Boron Nitride
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