Coulomb Blockade of Two Quantum Dots in Series

1994 ◽  
Vol 33 (Part 1, No. 9A) ◽  
pp. 4876-4877 ◽  
Author(s):  
Toshitsugu Sakamoto ◽  
Sungwoo Hwang ◽  
Fumiyuki Nihey ◽  
Yasunobu Nakamura ◽  
Kazuo Nakamura
1994 ◽  
Vol 16 (3) ◽  
pp. 291-294 ◽  
Author(s):  
T. Sakamoto ◽  
S.W. Hwang ◽  
F. Nihey ◽  
Y. Nakamura ◽  
K. Nakamura

2001 ◽  
Vol 15 (31) ◽  
pp. 4111-4121 ◽  
Author(s):  
JIN-FU FENG ◽  
SHI-JIE XIONG

We study the transport properties of electrons in a quantum wire with side-coupled quantum dots in Coulomb blockade regime by the use of the equivalent single-particle multi-channel network and Landauer formula. At low temperatures the calculated dependence of the conductance on the gate voltage of dots exhibits two dips, indicating the destructive interference of the wave directly transmitted through the wire and the wave reflected from the dots. In a wire with more than one side-coupled dots the suppression of conductance is a simple summation of the effects of scattering of all the dots. The possibility of fabricating tunable switch devices by using such structures is discussed.


VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 193-198
Author(s):  
H.-O. Müller ◽  
D. A. Williams ◽  
H. Mizuta

We investigate the design of a Coulomb blockade device consisting of a rectangular array of quantum dots or ultrasmall metallic islands with regard to its stability against geometric size disorder and offset charges. To simulate the device operation we perform a statistical analysis of the Coulomb blockade voltage which results in practical design rules.


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