scholarly journals Design Optimization of Coulomb Blockade Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 193-198
Author(s):  
H.-O. Müller ◽  
D. A. Williams ◽  
H. Mizuta
Keyword(s):  
Quantum Dots ◽  
Statistical Analysis ◽  
Design Optimization ◽  
Coulomb Blockade ◽  
Rectangular Array ◽  
Design Rules ◽  
Practical Design ◽  
Geometric Size ◽  
Device Operation

We investigate the design of a Coulomb blockade device consisting of a rectangular array of quantum dots or ultrasmall metallic islands with regard to its stability against geometric size disorder and offset charges. To simulate the device operation we perform a statistical analysis of the Coulomb blockade voltage which results in practical design rules.

scholarly journals Intermittency of CsPbBr3 Perovskite Quantum Dots Analyzed by an Unbiased Statistical Analysis

2021 ◽  
Author(s):  
Isabelle M. Palstra ◽  
Ilse Maillette de Buy Wenniger ◽  
Biplab K. Patra ◽  
Erik C. Garnett ◽  
A. Femius Koenderink
Keyword(s):  
Quantum Dots ◽  
Statistical Analysis ◽  
Perovskite Quantum Dots

Coulomb Blockade of Two Quantum Dots in Series

1994 ◽  
Vol 33 (Part 1, No. 9A) ◽  
pp. 4876-4877 ◽  
Author(s):  
Toshitsugu Sakamoto ◽  
Sungwoo Hwang ◽  
Fumiyuki Nihey ◽  
Yasunobu Nakamura ◽  
Kazuo Nakamura
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
In Series

ANTI-RESONANCES OF TUNNELING THROUGH A QUANTUM WIRE WITH SIDE-COUPLED QUANTUM DOTS

2001 ◽  
Vol 15 (31) ◽  
pp. 4111-4121 ◽  
Author(s):  
JIN-FU FENG ◽  
SHI-JIE XIONG
Keyword(s):  
Quantum Dots ◽  
Single Particle ◽  
Low Temperatures ◽  
Quantum Wire ◽  
Coulomb Blockade ◽  
Destructive Interference ◽  
Channel Network ◽  
Coupled Quantum Dots ◽  
Coulomb Blockade Regime ◽  
Simple Summation

We study the transport properties of electrons in a quantum wire with side-coupled quantum dots in Coulomb blockade regime by the use of the equivalent single-particle multi-channel network and Landauer formula. At low temperatures the calculated dependence of the conductance on the gate voltage of dots exhibits two dips, indicating the destructive interference of the wave directly transmitted through the wire and the wave reflected from the dots. In a wire with more than one side-coupled dots the suppression of conductance is a simple summation of the effects of scattering of all the dots. The possibility of fabricating tunable switch devices by using such structures is discussed.

scholarly journals Overcoming the Realization Problems of Wideband Matching Circuits

2018 ◽  
pp. 31-36
Author(s):  
Balázs Matolcsy ◽  
Attila Zólomy
Keyword(s):  
Design Process ◽  
Circuit Simulation ◽  
Impedance Matching ◽  
Microwave Circuit ◽  
Design Rules ◽  
Analytical Design ◽  
Calculation Technique ◽  
Matching Networks ◽  
Practical Design

During the analytical design process of wideband impedance matching major problems may arise, that might lead to non-realizable matching networks, preventing the successful impedance matching. In this paper two practical design rules and a simplified equation is presented, supporting the design of physically realizable impedance matching networks. The design rules and calculation technique introduced by this paper is summarized, and validated by microwave circuit simulation examples.

scholarly journals Resistor Geometry Comparison With Respect to Current Noise and Trim Sensitivity

1977 ◽  
Vol 4 (2) ◽  
pp. 63-68 ◽  
Author(s):  
W. Ulbrich
Keyword(s):  
Finite Difference ◽  
Current Distribution ◽  
Current Noise ◽  
Total Resistance ◽  
Sheet Resistivity ◽  
Design Rules ◽  
Optimal Geometry ◽  
Practical Design ◽  
Finite Difference Solution ◽  
Resistance Value

The paper deals with laser trimming of film resistors. The finite-difference solution of the electric field calculated by a digital computer gives the total resistance and the inhomogeneous current distribution within the resistor area. The current noise voltage was found to be proportional to the sum of reciprocal subareas wherein the current density is approximately constant. Resistor trimming is modelled by finite increments of cut length to obtain the resistance trim rate and the trim sensitivity.Known and new resistor geometries and cut configurations are compared (based on the same resistor area and the same initial tolerance of ± 20%) to find the optimal geometry depending on the ratio of the nominal resistance value to the sheet resistivity. Diagrams are given leading to practical design rules not only for resistance trimming but also for deterministic and functional tuning.

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