Optically Pumped Stimulated Emission from $\bf CuGa(S_{0.65}Se_{0.35})_{2}/CuAl_{0.3}Ga_{0.7}(S_{0.65}Se_{0.35})_{2}$ Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy

Vapor Phase Epitaxy ◽

Stimulated Emission ◽

Optically Pumped ◽

Optically pumped stimulated emission from cubic GaN/AlGaN double heterostructure grown on GaAs(100) using metalorganic vapor-phase epitaxy

10.1016/s0022-0248(98)00326-1 ◽

1998 ◽

Vol 189-190 ◽

pp. 411-414 ◽

Cited By ~ 6

Author(s):

Atsushi Nakadaira ◽

Hidenao Tanaka

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Stimulated Emission ◽

Optically Pumped ◽

Double Heterostructure ◽

Cubic Gan

Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.119654 ◽

1997 ◽

Vol 71 (6) ◽

pp. 812-814 ◽

Cited By ~ 28

Author(s):

Atsushi Nakadaira ◽

Hidenao Tanaka

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Stimulated Emission ◽

Optically Pumped ◽

Cubic Gan

High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.122184 ◽

1998 ◽

Vol 73 (11) ◽

pp. 1496-1498 ◽

Cited By ~ 5

Author(s):

A. L. Gurskii ◽

I. P. Marko ◽

E. V. Lutsenko ◽

G. P. Yablonskii ◽

H. Kalisch ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Optically Pumped

AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy

10.1016/0022-0248(94)90977-6 ◽

1994 ◽

Vol 137 (3-4) ◽

pp. 400-404 ◽

Cited By ~ 7

Author(s):

Jyh-Feng Lin ◽

Meng-Chyi Wu ◽

Ming-Jiunn Jou ◽

Chuan-Ming Chang ◽

Biing-Jye Lee

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073424 ◽

1987 ◽

Vol 23 (6) ◽

pp. 704-711 ◽

Cited By ~ 49

Author(s):

K. Kobayashi ◽

I. Hino ◽

A. Gomyo ◽

S. Kawata ◽

T. Suzuki

Keyword(s):

Visible Light ◽

Active Layer ◽

Vapor Phase ◽

Laser Diodes ◽

Vapor Phase Epitaxy ◽

Characterization of InGaAsP/InP double‐heterostructure wafers grown by metalorganic vapor phase epitaxy for semiconductor lasers by photoluminescence investigation with high‐power YAG‐laser excitation

Journal of Applied Physics ◽

10.1063/1.339908 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1722-1728 ◽

Cited By ~ 10

Author(s):

Masashi Nakao ◽

Kenji Sato ◽

Mamoru Oishi ◽

Yoshio Itaya ◽

Yoshihiro Imamura

Keyword(s):

Semiconductor Lasers ◽

Vapor Phase ◽

High Power ◽

Laser Excitation ◽

Vapor Phase Epitaxy ◽

Yag Laser ◽

Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry